This paper presents the results of investigations on integrated inductors for a new low cost MCM-D substrate technology. The results are focused on the analysis of design options and design parameter for planar spiral inductors. Measurements on test structures were used to quantify process tolerances and inductor performance and to set up accurate models for em-simulations. Simulation results o...

Abstract—In this paper, a high-conversion-ratio bidirectional dc–dc converter with coupled inductor is proposed. In the boost mode, two capacitors are parallel charged and series discharged by the coupled inductor. Thus, high step-up voltage gain can be achieved with an appropriate duty ratio. The voltage stress on the main switch is reduced by a passive clamp circuit. Therefore, the low resist...

DC-DC converter is a converter where we are regulating the input voltage to get the desired output voltage which is either greater than or equal to or less than the input voltage with positive or negative polarity. A lot of dc-dc converters are available in the world out of which SEPIC (Single-Ended Primary-Inductor Converter) converter is one of them. To analyse the converter, a lot of techniq...

This paper presents a high step-down tranformerless single-stage single-switch ac/dc converter suitable for universal line applications (90–270 Vrms ). The topology integrates a buck-type power-factor correction (PFC) cell with a buck–boost dc/dc cell and part of the input power is coupled to the output directly after the first power processing. With this direct power transfer feature and shari...

This paper presents a novel wide tuning range CMOS Voltage Controlled Oscillator (VCO). VCO uses an on-chip variable inductor as an additional variable element to extend the tuning range of VCO. The fabricated variable inductor achieves the variable range of 35%. The VCO was fabricated using 0.35 μm standard CMOS process, and can be tuned continuously from 2.13 GHz to 3.28 GHz (tuning range of ...

A 2.5D EM-simulator has been used to study how planar inductor performance is influenced by an epitaxial substrate. The simulation model used has been adjusted and verified by measurements on an octagonal inductor fabricated in a submicron CMOS technology. The impact of the epitaxial layer has been studied by sweeping it’s permittivity, thickness, and resistivity. The results show that typical ...

On-chip circular vertical solenoid inductors have been designed and fabricated using standard 6-metal layer CMOS process. Compared to the 4.1nH circular planar spiral inductor on the same chip, the 4.8nH solenoid inductor gives about 20% increase in maximum quality-factor (QF) and 50% increase in self-resonant frequency (SRF), but only occupies 20% of the area. The inductor impedance can be mod...

A new structure of the solenoid inductor is presented in this paper. The proposed solenoid inductor has been simulated in a standard 0.18um one-poly-six-metal (1P6M) CMOS process. The proposed inductor products higher quality factor and inductance value in compare with the traditional designs. Furthermore, the new structure shows more improvement in the peak of quality factor so the number of t...

In this paper, parametric analysis of miniature on-chip 3-D inductor is presented. The effect of conductor width, spacing between conductors and number of turns of inductor on Quality factor (Q-factor), inductance and Self-resonant frequency (SRF) are studied. Improvement in percentage increase of Q-factor is due to increase in conductor width. It can be found that ~72% of on-chip area reductio...

A fully integrated 5.8 GHz ETC transceiver LSI has been developed. The transceiver consists of LNA, down-conversion MIX, ASK detector, ASK modulator, DA VCO, and ∆Σ-fractional-N PLL. The features of the transceiver are integrated matching circuitry for LNA input and for DA output, ASK modulator with VGA for local signal control to avoid local leakage and to keep suitable modulation index, and L...