BACKGROUND Intermittent negative pressure (INP) applied to the lower leg and foot increases foot perfusion in healthy volunteers. The aim of the present study was to describe the effects of INP to the lower leg and foot on foot macro- and microcirculation in patients with lower extremity peripheral arterial disease (PAD). METHODS In this experimental study, we analyzed foot circulation during...

We have investigated the structural and optical properties of type-II GaSb/InGaAs quantum dots [QDs] grown on InP (100) substrate by molecular beam epitaxy. Rectangular-shaped GaSb QDs were well developed and no nanodash-like structures which could be easily found in the InAs/InP QD system were formed. Low-temperature photoluminescence spectra show there are two peaks centered at 0.75eV and 0.7...

Recently, small-signal microwave performance has been reported for PNP InAlAs/InGaAs HBTs [1, 2]. While power performance of PNP AlGaAs/GaAs HBTs has been demonstrated [3], nothing has been reported on power performance of PNP HBTs in the InP material system. In this work, InAlAs/InGaAs PNP HBTs were fabricated and subsequently characterized under large signal conditions at X-band to determine ...

The effects of CH&I, reactive ion etching (RIE) on the optical properties of an InP/InGaAs multiple-quantum-well structure have been investigated by low-temperature photoluminescence (PL). The structure consisted of eight InGaAs quantum wells, lattice matched to InP, with nominal thicknesses of 0.5, 1,2,3,5, 10,20, and 70 monolayers, respectively, on top of a 200~nm-thick layer of InGaAs for ca...

Indium phosphide nanowires (InP NWs) are accessible at 440 °C from a novel vapor phase deposition approach from crystalline InP sources in hydrazine atmospheres containing 3 mol % H₂O. Uniform zinc blende (ZB) InP NWs with diameters around 20 nm and lengths up to several tens of micrometers are preferably deposited on Si substrates. InP particle sizes further increase with the deposition temper...

Blue indium phosphide quantum dot (InP QD) is an emerging colloidal semiconductor nanocrystal, considered as a promising next-generation photoactive material for light-emitting purposes. Despite the tremendous progress in blue InP QDs, synthetic method tailoring core size to realize blue-emissive QDs still lags behind. This work suggests blue-emitting by engineering with incipient ZnS (i-ZnS) s...

The existence of polytypism in semiconductor nanostructures gives rise to the appearance of stacking faults which many times can be treated as quantum wells. In some cases, despite of a careful growth, the polytypism can be hardly avoided. In this work, we perform an ab initio study of zincblende stacking faults in a wurtzite InP system, using the supercell approach and taking the limit of low ...

We design, fabricate, and test photonic crystal heterostructure cavity lasers in the InP material system. A heterostructure cavity is formed by interfacing two different photonic crystals such that a dispersion maximum of the inner lattice lies within the band gap of the surrounding lattice. Feedback to slow light modes of the central region results in a lower threshold and single mode operatio...

X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved ...

Ice nucleating particles active at warm temperatures (e.g. -8 °C; INP-8) can transform clouds from liquid to mixedphase, even at very small number concentrations (<10 m). Over the course of 15 months, we found very similar patterns in weekly concentrations of INP-8 in PM10 (median = 1.7 m, maximum = 10.1 m) and weekly amounts of rainfall (median = 28 mm, maximum = 153 mm) at Birkenes, southern ...