نتایج جستجو برای: integrated optoelectronic circuit
تعداد نتایج: 371760 فیلتر نتایج به سال:
چکیده ندارد.
چکیده ندارد.
The effects of radiation damage on modern electronic and optoelectronic is discussed. Ionization damage causes degradation in transistors and integrated circuits, and there are new effects -including enhanced damage at low dose rate -that have to be considered when devices are tested and qualified for space use. For optoelectronic devices displacement damage is usually the main concern. Some ty...
در این پایان نامه آی سی ارائه شده، آی سی حفاظتی بوده که به دلایلی نظیر، امنیت بالا، حجم کوچک، سادگی مصرف، کاربردهای متنوع و... که در بخشهای بعدی توضیح داده خواهند شد. در این متن مدار سخت افزار ونرم افزاری ارائه شده که می تواند این آی سی تولید کننده رمز (nm95hs01&02) را که به اندازه 13 بایت حافظه eeprom دارد برنامه ریزی و رجیسترهای آن را فعال نماید. در پایان یکی از شایع ترین کاربردهای این آی سی ...
Introduction: Negative resistance elements are important components in oscillator circuits and form the basis of many other nonlinear circuits. Resonant tunnelling diodes (RTDs) have attracted much attention due to their wide-bandwidth negative differential resistance (NDR), up to hundreds of GHz [1]. Because RTDs can be easily integrated in electronic and optoelectronic circuits, the applicati...
A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2 nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electr...
چکیده ندارد.
We report planar integration of tapered terahertz (THz) frequency quantum cascade lasers (QCLs) with metasurface waveguides that are designed to be spoof surface plasmon (SSP) out-couplers by introducing periodically arranged SSP scatterers. The resulting surface-emitting THz beam profile is highly collimated with a divergence as narrow as ~4° × 10°, which indicates a good waveguiding property ...
The authors present a low-power 850 nm Si optoelectronic integrated circuit (OEIC) receiver fabricated in standard 65 nm complementary metal–oxide semiconductor (CMOS) technology. They analyse power consumption of previously reported CMOS OEIC receivers and determine the authors receiver architecture for low-power operation. Their OEIC receiver consists of a CMOS-compatible avalanche photodetec...
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