Based on accurate first principles density functional theory (DFT) calculations, an unusual phenomenon of interfacial structural modifications, due to the interface chemistry influence is identified at two metal-nitride interfaces with strong metal-nitrogen affinity, Al/TiN {111} and Al/VN {111} interfaces. It is shown that at such interfaces, a faulted stacking structure is energetically prefe...

Stability is achieved in most approximate Riemann solvers through ‘flux upwinding’, where the flux at the interface is arrived at by adding a dissipative term to the average of the left and right flux. Motivated by the existence of a collapsed interface state in the gas-kinetic Bhatnagar–Gross–Krook (BGK) method, an alternative approach to upwinding is attempted here; an interface state is arri...

The phenomenon of evaporation of volatile metal bath components can be observed in numerous process of both extractive metallurgy and refi ning. In some of them, this phenomenon can be considered positive, in others, however, to the contrary. In order to intensify the evaporation process or to restrain it, one must necessarily know the factors determining its rate. The most important of those f...

The phenomenon of heat flux bifurcation inside a porous medium is analyzed by studying the convective heat transfer process within a channel partially filled with a porous medium under Local Thermal NonEquilibrium (LTNE) conditions. Either the thermal dispersion effect or the inertial effect is considered in the physical model. Exact solutions are derived for both the fluid and solid temperatur...

With basis in a qualitative player study, this paper presents different player attitudes concerning user interface elements. The paper focuses on how the game user interface influences the players’ involvement in the game, and how the players navigate between different sources of involvement. We argue that there is no necessary connection between a transparent interface and involvement, and tha...

Interface engineering has become an important strategy for designing radiation-resistant materials. Critical to its success is fundamental understanding of the interactions between interfaces and radiation-induced defects, such as voids. Using transmission electron microscopy, here we report an interesting phenomenon in their interaction, wherein voids adhere to only one side of the bimetal int...

We report a new type of memory device based on insulating LaAlO₃/SrTiO₃ (LAO/STO) hetero-interface. The microstructures of the LAO/STO interface are characterized by Cs-corrected scanning transmission electron microscopy, which reveals the element intermixing at the interface. The inhomogeneous element distribution may result in carrier localization, which is responsible for the insulating stat...

copper–silver bimetallic strips were produced by cold roll welding process and were treated by diffusion annealing in the temperature range 250–800 ?c. the interface bonding strength was determined by bending and peeling tests, resistance, conductivity and micro hardness profiles were determined and microstructure in the interface region was observed by optical microscope. electrical resistance...