Pre-distortion is basically a method by which one first stimulates a non-linear power amplifier (PA) with baseband samples and then observes the result of that stimulus at the PA output. Then , the amplitude-toamplitude modulation (AM/AM) and amplitude-to-phase modulation (AM/PM) effects of the PA are estimated. These estimated distortions are then removed from the PA by pre-distorting the inpu...

In this paper, we have developed a high power solid-state power amplifier (SSPA) for Sband military radars. The SSPA consists of a high power amplifier (HPA) module combined GaN based power amplifier pallets, a drive amplifier (DA) module, a digital control module and a power supply unit. The SSPA shows the total output power of 62 dBm in S-band.

The identification algorithm of Wiener-Hammerstein nonlinear model is proposed in the paper. When the nonlinearity in the Wiener-Hammerstein model is approximated by polynomial or spline function, the identification algorithms can be implemented iteratively, and the compensator for the nonlinear distortion is given by using the estimated Wiener-Hammerstein model and its inverse. A numerical sim...

In this paper, power amplifier operating with center frequency of 947.5 MHz, which can be used for the transmitter in beamforming systems, is proposed. The power amplifier implemented provides high power added efficiency (PAE) of 71.967% and low noise figure (NF) as low as 1.525. The linearity of the power amplifier is improved by using square law and cubic law analog predistortion techniques. ...

This paper presents a baseband predistorter to be used in OFDM systems operating with a nonlinear high power amplifier (HPA). Key features of the predistorter reside in the use of the HPA inverse structure as nonlinear distortion compensator. The performance of the compensated system is analyzed by simulations in an AWGN environment. The receiver also needs furthermore an equalizer in order to ...

a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

Absfracr-The class E tuned power amplifier consists of a load network and a single transistor that is operated as a switch at tbe carrier frequency of tbe output signal. ‘zbe most simple type of load network consists of a capacitor shunting tbe transistor and a series-tuned output circuit, which may bave a residual reactance. Circuit operation is determined by tbe transistor when it is on, and ...

In this paper we design a low-voltage class-E power amplifier (PA) in a standard CMOS 0.35μm integrated technology, to be used in a UMTS transceiver having the following specifications: f=1.95 GHz, VDC=1 V, Pout=0.5 W. The designed class-E network accommodates the simultaneous presence of a parasitic ground inductance and losses in the switch and shunt-capacitor. The transistor is dimensioned f...

A new output structure for class E power amplifier (PA) is proposed in this paper. A series LC resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. This resonator causes low impedance at the second harmonic. The output circuit is designed to shape the switch voltage of the class E amplifier and lower the voltage stress of the transistor. T...