721 Abstract— Polymer base organic PN junction with various ion types was studied. Low-energy ion implantation technique(~keV) is very useful in physical doping on PPP(Polyparaphenylene) polymer. By double implantation, effective organic PN junction was achieved. The best obtained electrical I-V property was rectification ratio which was about 10000. However, still have problems in low junction...

Channeling and transmission electron microscopy have been used to investigate the parameters that govern the extent of damage in ion-implanted GaAs and the crystal quality following capless furnace annealing at low temperature ( -400 •q. The implantation-induced disorder showed a strong dependence on the implanted ion mass and on the substrate temperature during implantation. When the implantat...

Silicon is the main n-type dopant used in GaAs, and it is usually incorporated into GaAs by ion implantation or by diffusion employing an external source. Ion implantation is also the only convenient way of introducing impurities exceeding the solid solubility limit. However, ion implantation studies have been done earlier only for concentrations under 10 atoms/cm [1,2]. Experimentally it has b...

Abstract Effect of nitrogen (N+) ion implantation on the morphological, structural, optical, and compositional properties vanadium pentoxide (V2O5) thin films grown glass substrates is studied. Surface morphology shows formation grains growth dynamics governed by roughness (α) (β) exponents. X-ray diffraction studies reveal that V2O5 exists in a hybrid form, with both orthorhombic tetragonal ph...

The current paper presents a state-of-the-art review in the field of ion implantation of polymers. Numerous published studies of polymers modified by ion beams are analysed. General aspects of ion stopping, latent track formation and changes of structure and composition of organic materials are discussed. Related to that, the effects of radiothermolysis, degassing and carbonisation are consider...

One of 3-D devices to achieve high density arrays was adopted in this study, where source and drain junctions are formed along the silicon fin. The screening by adjacent high fins for large sensing margin makes it hard to ion-implant with high angle so that vertical ion implantation is inevitable. In this study, the dependency of current characteristics on doping profiles is investigated by 3-D...

Tin oxide films were implanted with N at various energies between 5 to 40 keV for different ion doses between 10 to 10 cm. The microstructure, optical and electrical properties of the films were investigated. From Transmission Electron Microscopy the implanted films were shown to be amorphous. The implanted thickness for the 10 keV and 40 keV were found to be 30 nm and 110 nm, respectively. The...

The aims of this study were to evaluate the fluorine depth profiles of pure titanium (Ti), stainless steel (SUS), and polymethyl methacrylate (PMMA) modified by plasma-based fluorine ion implantation and the effects of fluorine ion implantation on contact angle, fluoride ion release, and S. mutans adhesion. Fluorine-based gases used were Ar+F2 and CF4. By means of SIMS, it was found that the pe...

The formation of voids and bubbles in the energetic ion implantation process is an important issue in material science research, involving swelling induced embrittlement of materials in nuclear reactors, catalytic activities in the nanopores of the bubble, etc. We report here the formation and in situ dynamics of metallic nanoblisters in GaN nanowires under self-ion implantation using a Ga focu...