Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted me...

Body fluids are often used as specimens for medical diagnosis. With the advent of advanced analytical techniques in biotechnology, the diagnostic potential of saliva has been the focus of many studies. We recently reported the presence of excess salivary sugars, in patients with Alzheimer's disease (AD). In the present study, we developed a highly sensitive, cell-based biosensor to detect treha...

This work presents the Ion-Sensitive Field Effect Transistor (ISFET) fabrication and electrical characterization for hydrogen peroxide sensing. Two configurations were set up to evaluate devices sensitivity concentration of solution. First, measurements with one electrode in sample solution (contained over gate area) performed, but results may not be directly related characteristics solution, d...

Ž . Ž . An ion-selective field effect transistor ISFET was applied as a potentiometric detector in liquid chromatography LC for the Ž determination of organic acids. The ISFET was prepared by coating the gate insulator of the encapsulated transistor with a poly vinyl . Ž . chloride PVC matrix membrane containing methyltridodecylammoniumchloride, which enables the detection of organic anions. Th...

It is very important to monitor pH values. In this paper, we fabricated an all-solid-state AlGaN/GaN-based ion-sensitive heterostructure field effect transistor (ISHFET) sensor microprobe. The microprobe could facilitate measurement of was by packaging the chip into a 21 G medical needle. performance integrated evaluated in range 4–9.18. A sensitivity 143.57 µA/pH can be achieved using with wid...

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming ...