نتایج جستجو برای: junctionless transistor
تعداد نتایج: 18841 فیلتر نتایج به سال:
Nowadays carbon nanoparticles are applied on the island of single electron transistor and Nano-transistors. The basis of single electron devices (SEDs) is controllable single electron transfer between small conducting islands. Based on the important points in quantum mechanics, when a wave passes through several spatial regions with different boundaries, the wave function of the first region di...
In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed the help Sentaurus TCAD. By varying various device parameters, analog/RF performance proposed TMGS-GCDG-JL s-Si evaluated in terms transconductance-generation-factor (TGF), early...
The hairpin ribozyme is a small catalytic RNA comprising two helix-loop-helix domains linked by a four-way helical junction (4WJ). In its most basic form, each domain can be formed independently and reconstituted without a 4WJ to yield an active enzyme. The production of such minimal junctionless hairpin ribozymes is achievable by chemical synthesis, which has allowed structures to be determine...
Extremely thin silicon show good mechanical flexibility because of their 2-D like structure and enhanced performance by the quantum confinement effect. In this paper, we demonstrate a junctionless FET which reveals a room temperature quantum confinement effect (RTQCE) achieved by a valley-engineering of the silicon. The strain-induced band splitting and a quantum confinement effect induced from...
This paper present an extensive review of homogeneously doped Junctionless Cylindrical Gate All Around (JL-CGAA) MOSFET using numerical simulations to look into deep physical insight of the device. The electrical and analog/RF performance has been investigated. The JL-C-GAA FET is more immune to short channel effect than the devices having p-n junctions. It also offers steeper subthreshold slop...
In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...
In this paper, for the first time, the effect of the substrate doping of 22nm double-insulating UTBB silicon-on-insulator device on the switching performance and turn-on delay of the transistor is investigated. In UTBB devices, the substrate voltage is varied from positive to zero then negative voltages to trade-off transistor speed against the leakage current. Various circuit design procedures...
In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...
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