A new class of integrated optical waveguide structures is presented, based on low cost CMOS compatible LPCVD processing. This technology allows for medium and high index contrast waveguides with very low channel attenuation. The geometry is basically formed by a rectangular crosssection silicon nitride (Si3N4) filled with and encapsulated by silicon dioxide (SiO2). The birefringence and minimal...

This paper mvestlgates the elcctrostatlc dnve and sense of polynhcon resonators parallel to the substrate, using an mterdlgtated capacitor (electrostatic comb) Three expenmental methods are used nucroscoplc observation mth contmuous or stroboscopic iummatlon, capacltlve sensing using an amphtude-modulation technique and SEM observation The mtnnslc quality factor of the phosphorus-doped low-pres...

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This work presents the investigation of some commercially available and commonly used Si3N4 foils prepared with LPCVD technique. The density and the stoichiometry of these films were determined by Rutherford backscattering spectroscopy and profilometry, while the study of impurities was achieved with particle induced X-ray emission method. It was found that the density of the studied Si3N4 film...

We demonstrate, for the first time to our knowledge, a fully etched TM grating coupler for low-loss Low-Pressure-Chemical-Vapor-Deposition (LPCVD) based silicon nitride platform with a coupling loss of 6.5 dB at 1541 nm and a 1 dB bandwidth of 55 nm, addressing applications where TM polarization is a pre-requisite. The proposed GC and the 360 nm × 800 nm strip based Si3N4 waveguides have been f...

Silicon germanium (SiGe) heterojunction transistors have been fabricated on bonded wafer, silicon-on-insulator (SOI) substrates. The devices have application in low power, radio-frequency electronics. The bonded wafer substrates incorporate poly-Si filled, deep trenches for isolation. A novel selective and non-selective low pressure chemical vapour deposition (LPCVD) growth process was used for...

Successfully integrating graphene in standard processes for applications in electronics relies on the synthesis of high-quality films. In this work we study Low Pressure Chemical Vapor Deposition (LPCVD) growth of bilayer graphene on the outside surface of copper enclosures. The effect of several parameters on bilayer growth rate and domain size was investigated and high-coverage bilayers films...

Design considerations and experiments have been made for obtaining a new type of active microvalves using silicon buckled membranes. The properties of the buckled membranes permitting to obtain high deflections and to actuate them more convenient are demonstrated. A thermal actuation using an aluminium ring layer heated with a polysilicon resistor is analysed. The polysilicon and the aluminium ...

Introduction Silicon oxynitride is a flexible material for use as planar optical waveguides because by changing the composition ( O N ratio) the refractive index can be tuned from 1.46 to 2.0'. Several methods can be used for deposition: PECVD, LPCVD and sputtering. The advantages of PECVD are easy control of composition, high deposition rate and low stress. A disadvantage is the high hydrogen ...

We report on a fully CMOS compatible fabrication method for ambipolar silicon nanowire FinFETs. The low thermal budget processing, compatible with monolithic 3D device integration, makes use of low pressure chemical vapor deposition (LPCVD) of amorphous Si (a-Si) and SiO2 layers as well as metal gate patterning using stencil lithography, demonstrated for the first time. FinFETs with stenciled A...