Very strong magnetoresistance and a resistivity plateau impeding low temperature divergence due to insulating bulk are hallmarks of topological insulators and are also present in topological semimetals where the plateau is induced by magnetic field, when time-reversal symmetry (protecting surface states in topological insulators) is broken. Similar features were observed in a simple rock-salt-s...

Extensive experimental results are presented on the multi-scale phase modulation phenomena observed in colossal magnetoresistance manganites. Two key types of phase inhomogeneities directly relevant to the colossal magnetoresistance (CMR) are discussed. The first type involves micrometer-scale coexistence of structurally and electronically different phases. We present extensive experimental dat...

Because of the chiral nature of electrons in a monolayer of graphite (graphene) one can expect weak antilocalization and a positive weak-field magnetoresistance in it. However, trigonal warping (which breaks p-->-p symmetry of the Fermi line in each valley) suppresses antilocalization, while intervalley scattering due to atomically sharp scatterers in a realistic graphene sheet or by edges in a...

Related Articles Room temperature deposition of alumina-doped zinc oxide on flexible substrates by direct pulsed laser recrystallization Appl. Phys. Lett. 100, 151902 (2012) Optimization of sputter deposition parameters for magnetostrictive Fe62Co19Ga19/Si(100) films J. Appl. Phys. 111, 07A939 (2012) Sign change in the organic magnetoresistance of tris(8-hydroxyquinolinato)aluminum upon anneali...

A simple two-band model is suggested explaining recently reported unusual features for hopping magnetoresistance and the metal-insulator transition in 2D structures. The model implies that the conductivity is dominated by the upper Hubbard band (D-band). Experimental studies of hopping magnetoresistance for Si δ-doped GaAs/AlGaAs heterostructure give additional evidences for the model.

We report ab-initio calculations of the spin-dependent transport and magnetoresistance of Ni atom wires. The electronic states are calculated using a numerical pseudo atomic orbital basis set in the frame work of the density functional theory, and the conductance is calculated using the Green’s function method. We show a magnetoresistance of 250%, which is explained by the scattering of d orbit...

We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel magnetization. All samples exhibit a positive magnetoresistance, consistent with domain-wall trapping. For metallic samples, we find a magnetoresistance up to 8%...

We search for general patterns that explain the low field magnetoresistance at low temperatures in the system A(2-x)A'xFeMoO6. The observed linear dependence of the low field magnetoresistance with the saturation magnetization for the series is related to the antisite disorder at the Fe and Mo sites. This is explained in terms of a spin dependent crossing of intragranular barriers originated fr...

Related Articles Strain modulated magnetization and colossal resistivity of epitaxial La2/3Ca1/3MnO3 film on BaTiO3 substrate Appl. Phys. Lett. 99, 092103 (2011) Magnetoresistance in epitaxial thin films of La0.85Ag0.15MnO3 produced by polymer assisted deposition Appl. Phys. Lett. 99, 083113 (2011) Natural media with negative index of refraction: Perspectives of complex transition metal oxides ...

We examine the anomalous inverse spin switch behavior in La0.7Ca0.3MnO3(LCMO)/YBa2Cu3O7-δ (YBCO)/LCMO trilayers by combined transport studies and polarized neutron reflectometry. Measuring magnetization profiles and magnetoresistance in an in-plane rotating magnetic field, we prove that, contrary to many accepted theoretical scenarios, the relative orientation between the two LCMO's magnetizati...