نتایج جستجو برای: microwave field effect transistor
تعداد نتایج: 2380861 فیلتر نتایج به سال:
We propose a semi-suspended device structure and construct nanogapped, hysteresis-free field-effect transistors (FETs), based on the van der Waals stacking technique. The structure, which features channel above submicrometer-long wedge-like nanogap, is fulfilled by transferring ultraclean boron nitride-supported MoS 2 channels directly onto dielectric-spaced vertical source/drain stacks. Electr...
Graphene, after its first production in 2004 have received lots of attentions from researchers because of its unique properties. High mobility, high sensitivity, high selectivity and high surface area make graphene excellent choice for bio application. One of promising graphene base device that has amazingly high sensitivity is graphene field-effect transistor (GFET). This review selectively su...
Investigations of Tunneling for Field Effect Transistors
We report on our progress and development of high speed flexible graphene field effect transistors (GFETs) with high electron and hole mobilities (~3000 cm/V·s), and intrinsic transit frequency in the microwave GHz regime. We also describe the design and fabrication of flexible graphene based radio frequency system. This RF communication system consists of graphite patch antenna at 2.4 GHz, gra...
We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.
We have investigated noise characteristics of novel GaN/Al0:15Ga0:85N doped channel heterostructure field effect transistors designed for high-power density applications. The measurements were carried out for various gate bias VGS and the drain voltage VDS varying from the linear to the saturation regions of operation VDS > 5 V. Our results show that flicker, e.g., 1=f noise, is the dominant li...
Heterostructure field effect transistors (HFETs) are based on AlGaN/GaN heterostructures which offer excellent electronic properties for the development of faster, heat-resistant , energy efficient transistors and application in microwave-power amplifiers [1,2]. The outstanding device performance in cut-off frequency, breakdown voltage, and device output power [3,4]. However, the comparatively ...
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