نتایج جستجو برای: molecular beam epitaxy
تعداد نتایج: 746525 فیلتر نتایج به سال:
We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride semiconductors. In this study, single-crystalline, wurtzite Y0.07Al0.93N films were epitaxially grown on GaN/sapphire templates by plasma-assisted molecular beam epitaxy. The process has been investigated current density–electric field (J-E) and polarization–electric (P-E) loops as well positive-up-negative-down...
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2HMoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2.
A review of surface structures of bare and adsorbate-covered GaN (0001) and (0001) surfaces is presented, including results for In, Mg, Si, and H adsorbates. Emphasis is given to direct determination of surface structure employing experimental techniques such as scanning tunneling microscopy, electron diffraction, and Auger spectroscopy, and utilizing first principles computations of the total ...
-The low temperature homoepitaxial growth of silicon has been probed iii situ by Reflection High Energy Electron Diffraction jRHEED) in a Molecular Beam Epitaxy jMBE)
Indium arsenide (InAs) quantum dots (QDs) grown by molecular beam epitaxy (EBM) on gallium (GaAs) substrates have exhibited quantized charge-trapping characteristics.
Silicon epitaxy on hydrogen-terminated Si(001) surfaces has been studied using molecular dynamics simulations. Epitaxy on the dihydride-terminated Si(001 )-( 1 × 1) surface is inhibited for Si atoms at thermal energies due to strain hindrances created by hydrogen. At greater incident Si atom energies (2-10 eV), epitaxy proceeds primarily through "subplantation", i.e. subsurface implantation of ...
Articles you may be interested in Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by temperature modulation molecular beam epitaxy Appl. Temperature modulation molecularbeam epitaxy and its application to the growth of periodic index separate confinement heterostructure InGaAs quantumwell lasers Periodic index separate confinement heterostructure InGa...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید