An alternative doping approach that exploits the use of organic donor/acceptor molecules for the effective tuning of the free electron concentration in quasi-2D ZnO transistor channel layers is reported. The method relies on the deposition of molecular dopants/formulations directly onto the ultrathin ZnO channels. Through careful choice of materials combinations, electron transfer from the dopa...

Due to high power consumption and difficulties with minimizing the CMOS transistor size, molecular electronics has been introduced as an emerging technology. Further, there have been noticeable advances in fabrication of molecular wires and switches and also molecular diodes can be used for designing different logic circuits. Considering this novel technology, we use molecules as the active com...

This paper presents a comprehensive investigation of how transistor level optimizations can be used to increase design quality of CMOS logic gate networks. Different properties of transistor networks are used to explain features and limitations of previous methods. We describe which figures of merit, including the logical effort, affect the design quality of a cell transistor network. Further, ...

Deep-submicron CMOS designs maintain high transistor switching speeds by scaling down the supply voltage and proportionately reducing the transistor threshold voltage. Lowering the threshold voltage increases leakage energy dissipation due to subthreshold leakage current even when the transistor is not switching. Estimates suggest a five-fold increase in leakage energy in every future generatio...

In this paper, we have proposed the concept of 7Transistor SRAM. 7-Transistor SRAM has been designed to provide an interface with CPU and to replace DRAM in systems that require very low power consumption. The feature of 7Transistor SRAM like low power consumption and leakage current have been analyzed with 45nm technology. The comparative study and mathematical modeling have been proposed for ...

The quantum transport of a gated polythiophene nanodevice is analyzed using density functional theory and nonequilibrium Green's function approach. For this typical molecular field effect transistor, we prove the existence of two main features of electronic components, i.e., negative differential resistance and good switching. Ab initio based explanations of these features are provided by disti...

We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of ...