نتایج جستجو برای: multi step mesh process

تعداد نتایج: 1938869  

Journal: :J. Comput. Physics 2016
Xiaodong Ren Kun Xu Wei Shyy

This paper presents a multi‐dimensional high‐order discontinuous Galerkin (DG) method in an arbitrary Lagrangian‐Eulerian (ALE) formulation to simulate flows over variable domains with moving and deforming meshes. It is an extension of the gas‐kinetic DG method proposed by the authors for static domains (X. Ren et al., A multi‐dimensional high‐order discontinuous Galerkin method based on gas ki...

Hamid Khaloozadeh Mohammad Talebi Motlagh

Modelling and forecasting Stock market is a challenging task for economists and engineers since it has a dynamic structure and nonlinear characteristic. This nonlinearity affects the efficiency of the price characteristics. Using an Artificial Neural Network (ANN) is a proper way to model this nonlinearity and it has been used successfully in one-step-ahead and multi-step-ahead prediction of di...

Journal: :International Journal for Simulation and Multidisciplinary Design Optimization 2009

Journal: :Computational Mechanics 2021

Abstract Forming of tires during production is a challenging process for Lagrangian solid mechanics due to large changes in the geometry and material properties rubber layers. This paper extends Arbitrary Lagrangian–Eulerian (ALE) formulation thermomechanical inelastic models with special consideration rubber. The ALE approach based on tracking spatial meshes used, an operator-split employed wh...

2013
Hyun Chan Lee

The STEP stands for the standard for exchange of product model data. It represents ISO 10303. In the STEP, the parametric design methodology is supported by various Parts. The first Part is ISO 10303-55: integrated generic resource: procedural and hybrid representation. The second Part is 10303108: integrated application resource: parameterization and constraint for explicit geometric product m...

Journal: :Micro and nano engineering 2023

We demonstrate the fabrication of sub-100 nm T-Gate structures using a single electron beam lithography exposure and tri-layer resist stack - PMMA/LOR/CSAR. Recent developments in modelling development were used to design process, which each is developed separately optimise resulting structure. By approach proximity correcting for full stack, we able independently vary gate length (50-100 nm) h...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید