Doped EuO is an attractive material for the fabrication of proof-of-concept spintronic devices. Yet for decades its use has been hindered by its instability in air and the difficulty of preparing and patterning high-quality thin films. Here, we establish EuO as the pre-eminent material for the direct integration of a carrier-concentration-matched half-metal with the long-spin-lifetime semicondu...

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Using first principles calculations based on gradient corrected density functional theory we show that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. This change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths, which is significantly greater on the surface than in the bulk. The present study prov...

Single-crystal, Cu-doped In x Ga1 - x N nanowires were grown on GaN/Al2O3 substrates via a vapor-liquid-solid (VLS) mechanism using Ni/Au bi-catalysts. The typical diameter of the Cu:In x Ga1 - x N nanowires was 80 to 150 nm, with a typical length of hundreds of micrometers. The as-grown nanowires exhibited diamagnetism. After annealing, the nanowires exhibited ferromagnetism with saturation ma...

Vibrational modes in O-doped GaN have been observed at 544 cm~1 in Raman spectroscopy. Under perturbation of large hydrostatic pressure the mode appears as a set of three di!erent lines Q 123 whose relative intensities change by pressure. A switching between the modes occurs near 10 and 20 GPa and is found to correlate with the electron capture process to the DX-like state of O. We employ a sim...

Defect physics of europium (Eu) doped GaN is investigated using first-principles hybrid density-functional defect calculations. This includes the interaction between rare-earth dopant and native point defects (Ga N vacancies) other impurities (O, Si, C, H, Mg) unintentionally present or intentionally incorporated into host material. While trivalent Eu$^{3+}$ ion often found to be predominant wh...

Heterostructures involving ZnS/GaN show promise for the injection of holes from p-GaN into n-ZnS. Utilizing knowledge obtained from ZnS phosphor technology, this combination could result in a new type of multi-color electroluminescent display. Further, this combination provides a very interesting interface. Both ZnS and GaN are very ionic materials. Hence, it is desirable that the interface wil...

In this study we present theoretical and experimental results regarding modulation doped p-AlGaN/(AlN)/GaN multi-heterostructures. As the heterostructures should yield both, higher lateral and better vertical conductivity than p-doped GaN, band structure simulations have been performed prior to growth experiments. Based on the simulation results several samples were grown by metalorganic vapor ...

we have performed a density functional theory investigation on the structural and electronic properties of pristine and nitrogen-doped tio2 anatase nanoparticles as the adsorbents for removal and degradation of hydrazine molecules in the environment. we have presented the most stable adsorption configurations and examined the interaction of hydrazine molecule with these doped and undoped nanopa...

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulseddirect current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartzsubstrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma wereused as precursors. The morphology and structure of the grown GaN NS werecharacterized by field emission scanning electron microscope (FE-SEM), transmissionelectro...