Organic electrochemical transistors (OECTs) are the building blocks of biosensors, neuromorphic devices, and complementary circuits. One rule in materials design for OECTs is inclusion a hydrophilic component chemical structure to enable ion transport film. Here, it shown that ladder-type, side-chain free polymer poly(benzimidazobenzophenanthroline) (BBL) performs significantly better than dono...

In this paper, we report the synthesis of tin oxide (SnO2) nanoparticles by co-precipitation technique. The structural, surface morphology, thermal and optical properties of the SnO2 samples were analysed using X-ray diffraction (XRD), High-resolution transmission electron microscopy (HRTEM), Fourier transformed infrared (FTIR) spectrum, thermo gravimetric analysis (TGA/DT...

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary m...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...

In this paper, a distributed simulation-based computational intelligence algorithm for inverse problem of nanoscale semiconductor device is presented. This approach features a simulation-based optimization strategy, and mainly integrates the semiconductor process simulation, semiconductor device simulation, evolutionary strategy, and empirical knowledge on a distributed computing environment. F...