Electronic nano-devices are giving rise to new phenomenological effects, since the high surface to volume ratio associated to their nano-scale volume makes superficial effects to predominate over bulk effects. With the reduction of the size of the devices to the nano-scale, the modeling of some phenomena traditionally treated as statistical effects should be carefully revised. A clear example o...

Resistive memory effect has been found in carbon nanostructure-based devices by Standley et al. Nano Lett. 8, 3345 2008 . Compared to nanostructures, hydrogenated amorphous carbon a-C:H has much more controllable preparation processes. Study on a-C:H-based memory is of great significance to applications of carbon-based electronic devices. We observed nonvolatile resistance memory behaviors in m...

Decreasing the dimensions of ionic conductors to the nanoscale has enabled the realization of new electrochemical devices integrated on Si-based and other microsystems. These comprise fast ionic conducting electrolytes for energy-applications such as micro-fuel cells [ 1,2 ] and batteries, [ 3 ] gas conversion/reformation catalysts, [ 4,5 ] sensors, [ 6 ] and for redox-reaction based resistive ...

Nano-carbon materials are promising canidates for applications in high performance devices, including highly sensitive biosensors. We have developed a self-alignment process for nano-carbon field effect transistors (FETs), using a carbon nanowall (CNW)—a nano-carbon materials—to fabricate CNW-FETs. We measured the pH dependence of the device properties. The binding molecules are known to be key...

Thermo-electric transport at the nano-scale is a rapidly developing topic, in particular in superconductor-based hybrid devices. In this review paper, we first discuss the fundamental principles of electronic cooling in mesoscopic superconducting hybrid structures, the related limitations and applications. We review recent work performed in Grenoble on the effects of Andreev reflection, photoni...

A deeper understanding of quantum effects in nano-electronic devices helps to improve the functionality and to develop new device types. The performance of carbon nanotube (CNT) field-effect transistor is studied using the non-equilibrium Green’s function (NEGF) formalism. The effects of elastic and inelastic scattering and the impact of parameters, such as electron–phonon coupling strength and...

This letter describes the use of vertically aligned carbon nanotubes (CNT)-based arrays with estimated 2-nm thick cobalt (Co) nanoparticles deposited inside individual tubes to unravel the possibility of using the unique templates for ultra-high-density low-energy 3-D nano-magneto-electronic devices. The presence of oriented 2-nm thick Co layers within individual nanotubes in the CNT-based 3-D ...

The built-in piezoelectric fields in group III-nitrides can act as road blocks on the way to maximizing the efficiency of opto-electronic devices. In order to overcome this limitation, a proper characterization of these fields is necessary. In this work nano-beam electron diffraction in scanning transmission electron microscopy mode has been used to simultaneously measure the strain state and t...

We propose the nano-scale displacement sensor with high resolution for weak-force systems could be realized based on vertical stacked two-dimensional (2D) atomic corrugated layer materials bound through Van der Waals (VdW) interaction. Using first-principles calculations, we found the electronic structure of bi-layer blue phosphorus (BLBP) varies appreciably to both the lateral and vertical int...

The topic of this project belongs to focus area #3 of the NSF solicitation: " Micro/Nanoscale Phenom-enology and Metrology. " Nano-structured materials are extremely attractive for applications requiring high strength and ductility. Two such areas are: (1) nano-layered composites for future aerospace applications demanding high strength-to-weight ratios; and (2) next-generation interconnect and...