Nanometer-scale graphene objects are attracting much research interest because of newly emerging properties originating from quantum confinement effects. We present Raman spectroscopy studies of graphene nanoribbons (GNRs), which are known to have nonzero electronic bandgap. GNRs of width ranging from 15 to 100 nm have been prepared by e-beam lithographic patterning of mechanically exfoliated g...

Metal-doped diamond-like carbon films were produced for the purpose of an electrochemical nanoelectrode. In this study we use Z-contrast scanning transmission electron microscopy to directly observe metal cluster formation and distributions within the chromium-doped carbon films. At low doping ~;6 at. % Cr!, Cr is uniformly distributed within the C matrix; at high doping ~;12 at. % Cr!, Cr-rich...

A two-step doping process, magnetic followed by charge or vice versa, is required to produce massive topological surface states (TSS) in topological insulators for many physics and device applications. Here, we demonstrate simultaneous magnetic and hole doping achieved with a single dopant, carbon, in Bi2Se3 by first-principles calculations. Carbon substitution for Se (C(Se)) results in an open...

background: the presence of heavy metals in the environment especially in water supplies have caused many concerns because of their toxicity and non-degradability. hexavalent chromium (cr) is one of the most toxic metals which is used in many industries, so it is essential to remove it from industrial wastewater. in this study, we made a comparison between different adsorption isotherms in the ...

In this work, we have developed a thermal sensor based on poly(3,4 ethylenedioxythiophene) (PEDOT) nano lms as thermoelectric material. The PEDOT nano lms have been synthesized by the electrochemical polymerization method. The thicknesses of the lms were around 120 nm. The doping level of PEDOT was controlled by chemical reduction using hydrazine. The achieved Seebeck coefficient is 40 μV/K. A ...

Silicon nano-wires were fabricated using thin Silicon on Insulator (SOI) wafers and a combination of anisotropic wet etching by TetraMethyl Ammonium Hydroxide (TMAH) and Local Oxidation of Silicon (LOCOS). These nano-wires were submitted to laser exposure using gas immersion laser doping (GILD). The result was the formation of either periodic nano-structures or silicon balls. Since the process ...

Gallium-doped n-type CdS nanowires (NWs) were successfully synthesized via a thermal evaporation method. The conductivities of the CdS NWs were dramatically improved by nearly nine orders of magnitude after Ga doping, and could be further tuned over a wide range by adjusting the doping level. High-performance metal-insulator-semiconductor field-effect transistors (MISFETs) were constructed base...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...