Carbon nanotubes (CNTs), with exceptional electronic and optical properties, have become great interest for future electronic applications. Some of these properties such as symmetric band structure, direct bandgap, and near ballistic transport make them attractive for circuit implementations. The objective of this paper is modeling, performance evaluation and prediction of carbon nanotube field...

We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single-electron transistor which is cap...

Quantum-dot Cellular Automata (QCA) as a nanoscale transistor-less device technology offers distinguishing advantages over the limitations of CMOS circuits. While more than 2 decades of design progress have been achieved with QCA, a comprehensive composition approach for the layout design in this technology is needed. In this study, the Priority-Phased Decomposition-Driven (PPDD) QCA logic desi...

We propose and demonstrate, based on the concept of a microwave bandstop filter, two quantum wave bandstop filter structures. Both structures employ nanoscale gates in a heterojunction transistor to induce a quantum cavity connected by two one-dimensional wires. As the electron wavelength is changed by the gate voltage, we observed that, at certain gate voltages, the transmission of electron wa...

We propose and demonstrate a new field-induced quantum dot transistor that has a nanoscale dot-gate inside the gap of a split gate. Because of the novel structure and small dot size, strong oscillations in the drain current as a function of the gate bias were observed at a temperature up to 4.2 K or with a drain bias up to 5 mV. Temperature dependent study showed that the energy gaps in the dot...

Bias temperature instability (among other problems) is a key reliability issue with nanoscale CMOS transistors. Especially in sensitive circuits such as sense amplifiers of SRAM arrays, transistor aging may significantly increase the probability of failure. By analyzing the Current Based Sense Amplifier circuit and Voltage-Latched Sense Amplifier circuit through HSPICE simulations, we observe t...

A graphene field effect transistor, where the active area is made of monolayer large-area graphene, simulated including a full 2D Poisson equation and drift-diffusion model with mobilities deduced by direct numerical solution semiclassical Boltzmann equations for charge transport suitable discontinuous Galerkin approach. The critical issue in transistor difficulty fixing off state which require...

Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors. Here, we show that nanotube transistors...

microscopy-based techniques is enabling new ways to build and investigate nanoscale electronic devices. Here we review several advanced techniques to characterize and manipulate nanoelectronic devices using an atomic force microscope (AFM). Starting from a carbon nanotube (CNT) network device that is fabricated by conventional photolithography (micron-scale resolution) individual carbon nanotub...

This paper presents logic level estimators of leakage current for nanoscale digital standard cell circuits. Here the proposed estimation model is based on the characterization of internal node voltages of cells and the characterization of leakage current in a single Field-Effect Transistor (FET). Finally the estimation model allowed direct implementation of supply voltage variation impact on le...