نتایج جستجو برای: narrow band gap semiconductor
تعداد نتایج: 360555 فیلتر نتایج به سال:
ZnS nanoparticles were synthesized by chemical precipitation method. As-prepared ZnS nanoparticles were found to be stabilized in the form of cubic phase. Cubic to hexagonal structural transformation was studied using X-ray diffraction (XRD). The effect of annealing temperature (100-700 ) on the band gap, particle size, and structural phase was investigated. Photoluminescence studies indicated ...
Infrared optoelectronics is driven by epitaxially grown semiconductors and the introduction of alternative materials often viewed with some suspicion until newcomer has demonstrated a high degree viability. nanocrystals have certainly reached this maturity switching from demonstration absorption chemists to their integration into increasingly complex systems. Here, we review recent developments...
Tunneling atomic force microscopy (TUNA) was used at ambient conditions to measure the current-voltage ($I$-$V$) characteristics clean surfaces of highly oriented graphite samples with Bernal and rhombohedral stacking orders. The characteristic curves measured on Bernal-stacked can be understood an ordinary self-consistent semiconductor modeling quantum mechanical tunneling current derivations....
Lead dioxide has been used for over a century in the lead-acid battery. Many fundamental questions concerning PbO2 remain unanswered, principally: (i) is the bulk material a metal or a semiconductor, and (ii) what is the source of the high levels of conductivity? We calculate the electronic structure and defect physics of PbO2, using a hybrid density functional, and show that it is an n-type se...
A systematic investigation of structural, mechanical, anisotropic, and electronic properties of SiC₂ and SiC₄ at ambient pressure using the density functional theory with generalized gradient approximation is reported in this work. Mechanical properties, i.e., the elastic constants and elastic modulus, have been successfully obtained. The anisotropy calculations show that SiC₂ and SiC₄ are both...
How to develop a new, efficient photo catalyst is still a big challenge to us. A suitable band gap is the key for light absorption of semiconductor. Herein, an innovative anion intercalation strategy is, for the first time, developed to regulate the energy band of semiconductor. Typically, we introduce a layered sulfate compound (Bi2O(OH)2SO4) as a new photo catalyst, which has not been known b...
Highly unconventional behavior of the thermodynamic response functions has been experimentally observed in a narrow gap semiconductor samarium hexaboride. Motivated by these observations, we use renormalization group technique to investigate many-body instabilities f-orbital semiconductors with band inversion limit weak coupling. After projecting out double occupancy states, formulate low-energ...
نمودار تعداد نتایج جستجو در هر سال
با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید