Nickel oxide has been widely used in chemical sensing applications, because it has an excellent p-type semiconducting property with high chemical stability. Here, we present a novel technique of fabricating three-dimensional porous nitrogen-doped nickel oxide nanosheets as a highly sensitive NO₂ sensor. The elaborate nanostructure was prepared by a simple and effective hydrothermal synthesis me...

Nitride-based device structures for electronic and optoelectronic applications usually incorporate layers of AlxGa1-xN, and nand p-type doping of these alloys is typically required. Experimental results indicate that doping efficiencies in AlxGa1-xN are lower than in GaN. We address the cause of these doping difficulties, based on results from first-principles densityfunctional-pseudopotential ...

Submitted for the MAR10 Meeting of The American Physical Society Novel Resistive Switching in MgO with Nitrogen Doping CHENGHAN YANG, Stanford University, XIN JIANG, MAHESH SAMANT, BRIAN HUGHES, LI GAO, ANDREW KELLOCK, STUART PARKIN, IBM Almaden Research Center — Resistive switching in oxide thin films has been extensively explored as a candidate for the next generation nonvolatile memory. The ...

Free-standing nitrogen-doped carbon nanofiber (NCNF) films based on polyacrylonitrile (PAN) were prepared simply by the combination of electrospinning and thermal treatment. We reused the nitrogen-rich gas generated as the byproduct of PAN at elevated temperature, mainly NH3, for surface etching and nitrogen doping. The as-obtained NCNFs exhibited a rougher surface and smaller diameter than pri...

BACKGROUND PURPOSE Photocatalytic water splitting for hydrogen evolution is a potential way to solve many energy and environmental issues. Developing visible-light-active photocatalysts to efficiently utilize sunlight and finding proper ways to improve photocatalytic activity for H2 evolution have always been hot topics for research. This study attempts to expand the use of sunlight and to enha...

This work report on the structural and electrical characteristics of zinc oxide single crystal samples doped with antimony. Doping was carried out by antimony thermal diffusion at 1000 °C for periods of one and two hours under nitrogen environment from a solid source formed by antimony oxide. X-ray diffraction was used to determine the crystalline phases in samples and the structural change owi...

We show that quantitative information on the electrical deactivation of doping can be obtained by combining the results of positron annihilation, secondary ion-mass spectrometry, and capacitance-voltage measurements. By applying this method to study the N doping of ZnS0.06Se0.94 , we can conclude that the fraction of electrically inactive nitrogen may vary from 0% to 80%, depending strongly on ...