Localized surface plasmon resonances (LSPRs) typically arise in nanostructures of noble metals resulting in enhanced and geometrically tunable absorption and scattering resonances. LSPRs, however, are not limited to nanostructures of metals and can also be achieved in semiconductor nanocrystals with appreciable free carrier concentrations. Here, we describe well-defined LSPRs arising from p-typ...

A thin-film transistor: An n-type polymer semiconductor, poly(2,3-bis(perfluorohexyl)thieno[3,4-b]pyrazine), was synthesized through a Pd-catalyzed polycondensation employing a perfluorinated multiphase solvent system. This is the first example of an n-type polymer semiconductor with exclusive solubility in fluorinated solvents. The fabrication of organic field effect transistors containing thi...

A double helicenic benzothieno–benzothiophene derivative, showing homochiral layers of MM and PP enantiomers in the single crystal phase, behaves as a p-type semiconductor thin-film OFET devices fabricated by both spin coating evaporation.

Arsenic has been reported in the literature as one of the few p-type dopants in the technologically promising II-VI semiconductor ZnO. However, there is an ongoing debate whether the p-type character is due to As simply replacing O atoms or to the formation of more complicated defect complexes, possibly involving As on Zn sites. We have determined the lattice location of implanted As in ZnO by ...

Solar photoelectrosynthesis of methanol was driven on hybrid CuO-Cu(2)O semiconductor nanorod arrays for the first time at potentials ~800 mV below the thermodynamic threshold value and at Faradaic efficiencies up to ~95%. The CuO-Cu(2)O nanorod arrays were prepared on Cu substrates by a two-step approach consisting of the initial thermal growth of CuO nanorods followed by controlled electrodep...

The improvement of the metal/InGaAs interface is essential for the future application of InGaAs metal source/drain Schottky-barrier metal-oxide-semiconductor field-effect-transistors. In this article, on In0.53Ga0.47As, the authors examine the recently proposed method of inserting an ultrathin insulator to modulate the effective Schottky-barrier height SBH at the metal/semiconductor interface. ...