The power conversion efficiency of CdSe and CdS quantum dot sensitized solar cells is enhanced by passivation with asymmetrically substituted phthalocyanines. The introduction of the phthalocyanine dye increases the efficiency up to 45% for CdSe and 104% for CdS. The main mechanism causing this improvement is the quantum dot passivation. This study highlights the possibilities of a new generati...

Dielectric interface would be formed on the electrode surface during the analysis or disposal of many phenolic compounds due to electro-polymerization. This could cause electrode passivation, also called electrode fouling, which is indicated by the continuously decaying current signal. This paper proposed a model based on the potential drop across the fouling layer, which is helpful for deep un...

This paper presents an experimental study on different microelectrode fabrication techniques, with particular focus on the robustness of the surface insulation towards typical working conditions required in lab-on-a-chip applications. Pt microelectrodes with diameters of 50 μm, 100 μm and 200 μm are patterned on a Si substrate with SiO(2) film. Sputtered SiO(2), low-pressure chemical vapor depo...

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital...

The performance of many silicon devices is limited by electronic recombination losses at the crystalline silicon c-Si surface. A proper surface passivation scheme is needed to allow minimizing these losses. The surface passivation properties of amorphous hydrogenated silicon a-Si:H on monocrystalline Si wafers are investigated here. We introduce a simple model for the description of the surface...

OBJECTIVES The goal of this study was to determine the chemical composition of the passivation layer of three clinically available orthodontic miniscrews at different depths. MATERIALS AND METHODS The miniscrews used were Aarhus Mini-Implant (AAR), IMTEC Ortho (IMT), and VectorTAS (VEC). The chemical compositions of the as-received miniscrews were determined by X-ray photoelectron spectroscop...

During fluorocarbon plasma etching of SiO2 , a polymer passivation layer is generally deposited on the surface of the wafer. The polymer layer regulates the etch by limiting the availability of activation energy and reactants, and providing the fuel for removal of oxygen. To investigate these processes, a surface reaction mechanism for fluorocarbon plasma etching of SiO2 has been developed. The...

Hydrogenated intrinsic amorphous silicon ((i) a-Si:H) can be grown by plasma-enhanced chemical vapor deposition with a non-columnar or columnar morphology. Nuclear resonant reaction analysis and corresponding effective stopping cross section analysis indicate a dependency of hydrogen effusion on the morphology of the (i) a-Si:H layer as well as the doping type and concentration of the c-Si wafe...

In this paper, we report simulation results of a top-emission organic light-emitting device (TOLED) with a passivation layer composed of silicon dioxide (SiO2) and silicon nitride (Si3N4) to protect organic layers from oxygen and moisture. Usually, the thickness of such a layer is about several micrometers. The electrode material of the device used for simulation is silver (Ag). The anode is th...

in the present study, the effects of growth defects and chromium content loss on the degradation of corrosion andpassivation of cathodic arc evaporation (cae-pvd) of stainless steel coating were investigated in 2 m sulphuricacid solution. eds analysis indicated that the micro-particles were obtained during the coating growth. in addition,it was detected that the growth defects had poor adhesion...