Carbon containing zirconia films are deposited from chemical vapor deposition (CVD) and plasma enhanced (PECVD), as being used thermal barrier coatings for many applications. Their conductivity has been measured temperatures ranging room temperature up to 450 K using the 3 ω method. It is shown that samples exhibit a lattice an electronic contribution reaching values 13 W/m/K CVD 5 PECVD at K. ...

The prevention of glow-to-arc transition exhibited by micro dielectric barrier discharge (MDBD), as well as its long lifetime, has generated much excitement across a variety of applications. Silicon nitride (SiNx) is often used as a dielectric barrier layer in DBD due to its excellent chemical inertness and high electrical permittivity. However, during fabrication of the MDBD devices with multi...

We present a powerful kinetic Monte Carlo (KMC) algorithm that allows one to simulate the growth of nanocrystalline silicon by plasma enhanced chemical vapor deposition (PECVD) for film thicknesses as large as several hundreds of monolayers. Our method combines a standard n-fold KMC algorithm with an efficient Markovian random walk scheme accounting for the surface diffusive processes of the sp...

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition ~PECVD! of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform ar...

Abstract This paper reports on the fabrication and characterization of high quality factor (Q) copper (Cu) inductors with thick insulator on standard silicon (Si) substrate (ρ = 10–20 cm). The thickness and the area of the insulating layer are optimized for high Q by fabricating inductors on very thick (∼50 μm) embedded silicon dioxide (SiO2) islands and 4–20 μm thick PECVD SiO2 coated standard...

The synthesis of vertically aligned single-walled carbon nanotubes (VA-SWNTs) by plasma-enhanced chemical vapor deposition (PECVD) was achieved at 500-600 °C, using ethylene as the carbon source and 1 nm Fe film as the catalyst. For growth of high-quality VA-SWNTs in a plasma sheath, it is crucial to alleviate the undesirable ion bombardment etching effects by the optimization of plasma input p...

Freestanding single-walled carbon nanotubes (SWCNTs) have been synthesized in a vertical direction, perpendicular to the growth substrate, using applied DC substrate bias in a microwave plasma-enhanced chemical vapor deposition (PECVD) synthesis process. The degree of alignment and spatial density of SWCNTs demonstrate a strong dependence on the magnitude of applied bias, with increased alignme...

Antimicrobial coatings deposited onto ultra high molecular weight polyethylene (UHMWPE) films were investigated using an atmospheric pressure - plasma enhanced chemical vapor deposition (AP-PECVD) process. Varying concentrations of a guanidine-based liquid precursor, 1,1,3,3-tetramethylguanidine, were used, and different deposition conditions were studied. Attenuated total reflectance - Fourier...

A single-layer graphene is synthesized on Cu foil in the absence of H(2) flow by plasma enhanced chemical vapor deposition (PECVD). In lieu of an explicit H(2) flow, hydrogen species are produced during the methane decomposition process into their active species (CH(x<4)), assisted with the plasma. Notably, the early stage of growth depends strongly on the plasma power. The resulting grain size...