The memristor, the fourth passive circuit element, was predicted theoretically nearly 40 years ago, but we just recently demonstrated both an intentional material system and an analytical model that exhibited the properties of such a device. Here we provide a more physical model based on numerical solutions of coupled drift-diffusion equations for electrons and ions with appropriate boundary co...

The ability to choose an appropriate manner in which to model a given device is crucial in making a compositional modeling [3] approach successful. In compositional modeling, a system is provided with a library of composible pieces of knowledge about the physical world, called model fragments, each representing a conceptually distinct phenomenon such as a physical process or one aspect of a com...

Silicon Carbide (SiC) is a wide band-gap semiconductor material with excellent material properties for high frequency, high power and high temperature electronics. In this work different SiC field-effect transistors have been studied using theoretical methods, with the focus on both the devices and the methods used. The rapid miniaturization of commercial devices demands better physical models ...

We report on an empirically based physical model developed for small-molecule organic thin film transistors (OTFTs). The model is an extension of an adapted MOSFET model for hydrogenated amorphous silicon TFTs accounting for an arbitrary energy distribution of mobile and trap states and allows the extraction of the parameters from the measured device characteristics. Ideally all parameters can ...

Physical models continue to form an essential outcome from industrial design practice. Whist the professional may be removed from the “hands-on” model build by employing the services of a model-maker, many designers consider such physical interaction as an important part of their idea development process. Visual and tactile feedback from model generation is considered by many as an essential pa...