نتایج جستجو برای: planar si
تعداد نتایج: 138625 فیلتر نتایج به سال:
In this work, shapes and shape transitions of several types of self-assembled heteroepitaxial nanostructures, as observed in in situ scanning tunneling microscopy experiments during growth, are examined in the framework of several equilibrium and kinetic models. In particular, heteroepitaxial TiSi2 and CoSi2 islands on Si(111) are shown to behave in accordance with generalized Wulff–Kaishew the...
In this paper, we consider the problem of touring a sequence of line segments in presence of polygonal domain fences. In this problem there is a sequence S = (s = S0, . . . , Sk, Sk+1 = t) in which s and t are respectively start and target points and S1, . . . , Sk are line segments in the plane. Also, we are given a sequence F = (F0, . . . , Fk) of planar polygonal domains called fences such t...
Plasma-enhanced atomic layer deposition of cobalt oxide onto nanotextured p(+)n-Si devices enables efficient photoelectrochemical water oxidation and effective protection of Si from corrosion at high pH (pH 13.6). A photocurrent density of 17 mA/cm(2) at 1.23 V vs RHE, saturation current density of 30 mA/cm(2), and photovoltage greater than 600 mV were achieved under simulated solar illuminatio...
It has been found that the introduction of layers Ge/Si quantum dots in a two-dimensional photonic crystal leads to strong (up factor 5) increase photocurrent near infrared range. The is regular triangular array holes Si/Ge/Si heterostructure grown on silicon-on-insulator substrate. results have explained by excitation planar modes crystal, which propagate along and effectively interact with in...
The chemical nature of the Ni!Si, Ni!Ni2Si and Si/Ni2Si interfaces have been investigated using x-ray photoelectron spectroscopy, Peak position, line shapes, and envelope intensities are used to probe the compositional structure of these systems. Two approaches have been employed: one approach examines the advancing planar silicide front by dynamically monitoring the in situ formation of Ni2SL ...
We search for the lowest-energy structure of XAu4 (X = C, Si, Ge, Sn) clusters and calculate the photoelectron spectrum for the lowest-energy isomer of each species. The gradual destabilization of the tetrahedral geometry from C → Si → Ge → Sn, as well as the structural transition from the tetrahedral to the square planar geometry from SiAu4 to GeAu4, indicate that the change of electronic prop...
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