P-type and N-type multi-gate vertical thin film transistors (vertical TFTs) have been fabricated, adopting the low-temperature (T ≤ 600°C) polycrystalline silicon (polysilicon) technology. Stacked heavily-doped polysilicon source and drain are electrically isolated by an insulating barrier. Multi-teeth configuration is defined by reactive ion etching leading to sidewalls formation on which undo...

the main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. consequently, the use of other energy sources has become necessary. renewable energy as a permanent and clean energy source is an answer to this problem. one such energy source includes photovoltaic solar energ...

Single-sided etching (SSE) of a-Si/poly-Si is typically considered a challenge for realizing cost-efficient TOPCon production sequence, as there certain degree unwanted wrap-around poly-Si deposition technologies such low pressure chemical vapor deposition, plasma-enhanced and atmospheric deposition. To date, alkaline or acidic wet-chemical solutions in either inline batch configurations are us...

We report on a process for fabricating self-aligned tungsten (W) nanowires with polycrystalline silicon core. Tungsten nanowires as thin as 10 nm were formed by utilizing polysilicon sidewall transfer technology followed by selective deposition of tungsten by chemical vapor deposition (CVD) using WF6 as the precursor. With selective CVD, the process is self-limiting whereby the tungsten formati...

Introduction: Accessibility to safe drinking water is an important human health issue, so water reuse and water resources management are critical in arid parts of developing  regions. This study aimed to investigate the use of a combined simple designed solar geyser/photocell for drinking water disinfection. Materials and Methods: In this study, a solar geyser with a simple design was combined...

This paper reports on polysilicon piezo-resistors that are fabricated at a low thermal budget using aluminium-induced-crystallization (AIC) of ultra-high-vacuum e-beam evaporated silicon films. By in-situ phosphorus doping of precursor amorphous silicon films e-beam evaporated at room temperature on aluminium layer, we are able to increase and control the gauge factor of the polysilicon films f...

A one-dimensional model of the polysilicon-gate-oxide-bulk structure is presented in order to analyze the implanted gate MOS-devices. The influence of the ionized impurity concentration in the polysilicon-gate near the oxide and the charge at the polysilicon-oxide interface on the flat-band voltage, threshold voltage, inversion layer charge and the quasi-static C-V characteristic is quantitativ...

We fabricated and measured the optical loss of polysilicon waveguides deposited using hot-wire chemical vapor deposition at a temperature of 240°C. A polysilicon film 220 nm thick was deposited on top of a 2000 nm thick plasma-enhanced chemical vapor deposition silicon dioxide layer. The crystalline volume fraction of the polysilicon film was measured by Raman spectroscopy to be 91%. The optica...

Abstract: Perovskite solar cells have become an attractive subject in the solar energydevice area. During ten years of development, the energy conversion efficiency has beenimproved from 2.2% to more than 22%, and it still has a very good potential for furtherenhancement. In this paper, a numerical model of the perovskite solar cell with thestructure of glass/ FTO/ TiO2/...