We have generated picosecond opfic1 pulses with very pure spectral characteristics using semiconductor lasers with monolithic cavities. Fx repetition rates less than 10 GHz, gain-switching of DFB lasers with quantum well loss-gratings is usul. Monolithic colliding pulse mode-locked semiconductor lasers are used to generate short pulses with repetition rate up to 350GHz.

We present a simple semianalytical model, which allows comprehensive analysis of the LO-phonon assisted electron relaxation in quantum well intersubband semiconductor lasers. Examples of scattering rate tailoring in type-I double quantum well heterostructures and analysis of the subband depopulation process in type-II heterostructures illustrate applicability of the model.

The concept of below-threshold and above-threshold current injection efficiency of quantum well sQWd lasers is clarified. The analysis presented here is applied to the current injection efficiency of 1200 nm emitting InGaAs and 1300 nm emitting InGaAsN QW lasers. The role of heavy-hole leakage in the InGaAsN QW lasers is shown to be significant in determining the device temperature sensitivity....

Very low threshold currents ~,100 mA! have been achieved in InGaAs strained single quantum well lasers at cryogenic temperatures. Threshold currents of 38 and 56 mA and external quantum efficiency ;1 mW/mA have been demonstrated under cw operation condition at temperatures of 6 and 77 K, respectively. The external quantum efficiency increased by about a factor of 2 at low temperatures ~,100 K! ...

Non(semi)polar plane grown GaN-based quantum well lasers are having big impact on the development of green and yellow-green lasers. In order to compare these effects, Hamiltonian, up to 8 by 8 k·p-method, is used. Thereby, dipole moments, effective mass and subbands are calculated. Obviously, the optical gain is enhanced and piezoelectric effects and effective mass are decreased due to internal...