نتایج جستجو برای: qws

تعداد نتایج: 319  

2007
S. Khatsevich D. H. Rich S. P. DenBaars

We have examined the carrier capture dynamics and excitation dependent charge distributions of coupled InGaN/GaN multiple quantum well samples. We measured the temporal evolution of time-delayed cathodoluminescence CL spectra to study the temperatureand excitation-dependent transfer of carriers from a surrounding confinement region into a coupled single quantum well. Samples possessing two diff...

Journal: :Applied sciences 2021

We demonstrate a widely tunable distributed Bragg reflector (DBR) laser operating at 1.8-µm, in which the DBR section was butt-jointed InGaAsP (λ = 1.45 μm) material. Through current and temperature tuning, tuning range of over 11 nm with side mode suppression ratio (SMSR) higher than 30 dB is obtained. Utilizing this laser, water methane detection experiment has been successfully implemented, ...

Journal: :Chinese Optics Letters 2023

Here, we present a study of the effective piezoelectric constant (e14e) temperature dependence in strained [111]-oriented zinc-blende quantum wells (QWs) embedded within semiconductor optical amplifier (SOA). We determined e14e using method that was insensitive to segregation phenomenon and bandgap energy, which required neither fitting parameters nor temperature-dependent expressions for energ...

2014
Rohan Singh

Submitted for the MAR14 Meeting of The American Physical Society Effect of Disorder on Spectral Diffusion in GaAs Quantum Wells Studied Using Two-Dimensional Coherent Spectroscopy ROHAN SINGH, JILA, University of Colorado and NIST, Boulder, GALAN MOODY, NIST, Boulder, MARK E. SIEMENS, University of Denver, Denver, HEBIN LI, Florida International University, Miami, STEVEN T. CUNDIFF, JILA, Unive...

2016
Ivan Shtepliuk Volodymyr Khranovskyy Rositsa Yakimova I. Shtepliuk V. Khranovskyy R. Yakimova

The development of optoelectronic devices based on highly-promising Zn1-xCdxO semiconductor system demands deep understanding of the properties of the Zn1xCdxO-based quantum wells (QWs). In this regard, we carried out a numerical study of the polarization-related effects in polar, semi-polar and non-polar ZnO/Zn1xCdxO/ZnO QWs with different parameters of the quantum well structure. The effects ...

2007
D. D. Lofgreen Y.-C. Chang L. A. Coldren

Introduction: Optics is a viable solution to address the limitations of copper-based electronics in short-distance interconnects [1]. In these compact systems, devices must meet the stringent requirements imposed by the power budget and the thermal restriction. Recently, VCSELs have received considerable interest for board and chip level interconnects owing to their small footprints, ease of fa...

Journal: :The Journal of the Acoustical Society of America 2008
D Keith Wilson Vladimir E Ostashev George H Goedecke

The coherence function of sound waves propagating through an intermittently turbulent atmosphere is calculated theoretically. Intermittency mechanisms due to both the turbulent energy cascade (intrinsic intermittency) and spatially uneven production (global intermittency) are modeled using ensembles of quasiwavelets (QWs), which are analogous to turbulent eddies. The intrinsic intermittency is ...

2014
Takako Endo Norio Konno

We study a discrete-time quantum walk (QW) on the line with a single phase at the origin which was introduced and studied by Wojcik et al.[1]. We call the model “the Wojcik model” here. Konno et al.[2] investigated other types of QWs with one defect at the origin. They presented a method which gives the stationary measure corresponding to localization for the QWs by use of the generating functi...

2017
Yoon Jang Chung K. W. Baldwin L. N. Pfeiffer

Thanks to their multi-valley, anisotropic, energy band structure, two-dimensional electron systems (2DESs) in modulation-doped AlAs quantum wells (QWs) provide a unique platform to investigate electron interaction physics and ballistic transport. Indeed, a plethora of phenomena unseen in other 2DESs have been observed over the past decade. However, a foundation for sample design is still lackin...

2012
Junjun Wang

The GaInN/GaN-based quantum wells (QWs) on one of the naturally stable semipolar facets (the {112̄2} facet) have inferior properties than those on the other (the {101̄1} facet). By optimizing the epitaxial growth conditions, the evolution of the {112̄2} facets of GaN inverse pyramids were successfully suppressed achieving a 50% higher photoluminescence (PL) intensity with even about 10 nm longer e...

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