نتایج جستجو برای: rapid thermal annealing
تعداد نتایج: 537532 فیلتر نتایج به سال:
The effects of annealing temperatures on composition and strain in SixGe1-x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode pe...
The stress relief of tetrahedral amorphous carbon (ta-C ) films by post-deposition thermal annealing was investigated. The films were subjected to rapid thermal annealing (RTA) for 2 min and conventional furnace annealing (CFA) for 30 min. In both cases, the films were annealed in vacuum with argon (4×10−2 Torr) at successive higher temperatures ranging from 500 to 800°C. It was found that anne...
In the last decade, Calcium Titanate has been introduced as a bioceramic with acceptable mechanical and biological properties for orthopaedic implant applications. In this study, CaTiO3 nano-structure coating was produced by sol-gel dip-coating route for biomedical applications. Calcium nitrate and titanium isopropoxide were used as a precursor. After coating process, the specimen was subject...
Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 °C to 700 °C in increments of 100 °C using a rapid thermal a...
In this work, the flatband voltage shift of SiO2 embedded with silicon nanocrystal (nc-Si) annealed at different annealing temperature, different annealing time and under different temperature ramping rates are being investigated. The Si-ions are implanted into the SiO2 with very low energy. The instability of the flatband voltage shift is due to fact that there are remaining Si ions in the SiO...
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