Resistive switching properties of a self-compliance resistive random access memory device in cross-point architecture with a simple stack structure of Ir/TaOx/W have been investigated. A transmission electron microscope and atomic force microscope were used to observe the film properties and morphology of the stack. The device has shown excellent switching cycle uniformity with a small operatio...

The local electronic properties of tantalum oxide (TaOx, 2 ≤ x ≤ 2.5) and strontium ruthenate (SrRuO3) thin-film surfaces were studied under the influence of electric fields induced by a scanning tunneling microscope (STM) tip. The switching between different redox states in both oxides is achieved without the need for physical electrical contact by controlling the magnitude and polarity of the...

Bipolar resistive switching properties and endurance switching behavior of the neodymium oxide (Nd₂O₃) thin films resistive random access memory (RRAM) devices for a high resistive status/low resistive status (HRS/LRS) using a low temperature supercritical carbon dioxide fluid (SCF) improvement post-treatment process were investigated. Electrical and physical properties improvement of Nd₂O₃ thi...

a communication net is usually represented by a linear graph g whose branches represent channels for information flow and whose vertices represent sources, sinks and switching centers. the purpose of this paper is to show that for modeling digital communication nets, conventional use of the concepts of capacity and terminal capacity is inadequate . we will present an alternative to max-flow min...

Resistive memory has attracted a great deal of attention as an alternative to contemporary flash memory. Here we demonstrate an interesting phenomenon that multimode resistive switching, i.e. threshold-like, self-rectifying and ordinary bipolar switching, can be observed in one self-assembled single-crystalline ZnO nanoisland with base diameter and height ranging around 30 and 40 nm on Si at di...

Resistive random access memory (RRAM) devices (e.g."memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature of resistance switching is still under extensive debate. In this study, we perform systematic investigation of the resistance switching mechanism in a TaOx based RRAM through detail...

Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...

We report a potential way to enhance and tune the multiferroic and resistive switching properties of BiFeO3 nanoparticles through dilute aliovalent Li(1+) doping (0.046 atomic percent) at the Fe(3+) sites of BiFeO3. The high purity of the samples and the extent of doping were confirmed by different physical characterizations. Enhanced multiferroic properties with a magnetic moment per Fe atom ≈...

*Correspondence: Marin Alexe, Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany e-mail: [email protected] We report a programmable analog memristor based on genuine electronic resistive switching combining ferroelectric switching and electron tunneling. The tunnel current through an 8 unit cell thick epitaxial Pb(Zr0.2Ti0.8)O3 film sandwiched betwe...