incorporate hundreds of millions of semiconductor devices (transistors, diodes, optical devices, etc.). To predict the performance of the VLSI circuits, the current-voltage (I-V) characteristics of the semiconductor device are required. Semiconductor device simulation codes provide a way of predicting I-V curves as device parameters are varied, without having to fabricate the device first. (The...

me usefulness and capabilities of photoelectrochemical processing of III-V semiconductors is presented. Examples include the etching of small period gratings, the formation of integral lenses, the decomposition of small bandgap semiconductors, the etching of ptype semiconductors, and the photoinitiated deposition of metal. The transport of carriers in the semiconductor and reactivity of the sur...

• Low-saturation current PureB Si diodes with B-deposition from 50 °C to 700 °C. Robust chemical and electrical behavior coupled B-bonding structure at interface. PureGa only Ga wetting layers 400 are electrically similar diodes. A layer before B deposition (PureGaB) gives better robustness than 4-nm-thin PureGaB can be contacted Al while alone Schottky formation. Nanolayers of pure boron (Pure...