We demonstrate a continuous wave (CW) sub-wavelength metallic-cavity semiconductor laser with electrical injection at room temperature (RT). Our metal-cavity laser with a cavity volume of 0.67λ3 (λ = 1591 nm) shows a linewidth of 0.5 nm at RT, which corresponds to a Q-value of 3182 compared to 235 of the cavity Q, the highest Q under lasing condition for RT CW operation of any sub-wavelength me...

In the past 20 years the semiconductor laser has become a key device in optical electronics because of its pure output spectrum and high quantum efficiency. As the capabilities of laser diodes have grown, so has the range of applications contemplated for them. A great success in semiconductor lasers has been brought by the ability to artificially structure new materials on an atomic scale by us...

A theoretical description of photoacoustic spectroscopy generated by wavelength modulation of a semiconductor laser source is reported for a Lorentzian absorption line. This model describes the firstand second-harmonic photoacoustic signals produced by a current-modulated semiconductor laser. Combined intensityand wavelength-modulation is considered with arbitrary phase shift. Experimental resu...

We present experimental evidence of coexisting periodic attractors in a semiconductor laser subject to external optical injection. The coexisting attractors appear after the semiconductor laser has undergone a Hopf bifurcation from the locked steady state. We consider the single-mode rate equations and derive a third-order differential equation for the phase of the laser field. We then analyse ...

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Optofluidic manipulation mechanisms have been successfully applied to micro/nano-scale assembly and handling applications in biophysics, electronics, and photonics. Here, we extend the laser-based optofluidic microbubble manipulation technique to achieve hybrid integration of compound semiconductor microdisk lasers on the silicon photonic circuit platform. The microscale compound semiconductor ...

After processing, the semiconductor material is cleaved into comparatively small pieces of 1.2mm by 1.4mm. These laser chips contain the important sorting cell as well as two neighboring cells to enable an easier handling of the chip and thus a protection of the lasers. However, due to the small dimensions of the laser chip, there was poor heat dissipation and consequently elevated temperatures...

We report on a study of a 698 nm extended cavity semiconductor laser with intracavity narrowband optical feedback from a whispering gallery mode resonator. This laser comprises an ultrahigh-Q (>10(10)) resonator supporting stimulated Rayleigh scattering, a diffraction grating wavelength preselector, and a reflective semiconductor amplifier. Single longitudinal mode lasing is characterized with ...

Reduction of the intensity noise in semiconductor lasers is important subject to extend application range of the device. Blue-violet InGaN laser reveals high quantum noise when the laser is operated with low output power. The authors proposed a new scheme of noise reduction both for the optical feedback noise and the quantum noise by applying electric feedback which is positive type at a high f...

This review focuses on theoretical foundations, experimental implementation and an overview of experimental results of the thermoreflectance spectroscopy as a powerful technique for temperature monitoring and analysis of thermal processes in semiconductor lasers. This is an optical, non-contact, high spatial resolution technique providing high temperature resolution and mapping capabilities. Th...