نتایج جستجو برای: semiconductor nanowire field effect transistor

تعداد نتایج: 2389964  

2011
Nikolas Hoepker

We have fabricated field effect transistors in order to study charge trapping in pentacene transistors and charge noise in a variety of organic field effect transistors.

2010
Shadi A Dayeh

The vapor–liquid–solid growth of semiconductor nanowires led to the implementation of engineered electronic and optoelectronic one-dimensional nanostructures with outstanding promise for device applications. To realize this promise, detailed understanding and control over their growth, crystal structure, and transport properties and their combined impact on device performance is vital. Here, we...

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

Journal: :Nanoscale 2013
Irina Lokteva Stefan Thiemann Florentina Gannott Jana Zaumseil

Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effec...

2010
Alicja Konczakowska Bogdan M. Wilamowski

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...

Journal: :Analytical chemistry 2009
Jay Huiyi Chua Ru-Ern Chee Ajay Agarwal She Mein Wong Guo-Jun Zhang

Arrays of highly ordered silicon nanowire (SiNW) clusters are fabricated using complementary metal-oxide semiconductor (CMOS) field effect transistor-compatible technology, and the ultrasensitive, label-free, electrical detection of cardiac biomarker in real time using the array sensor is presented. The successful detection of human cardiac troponin-T (cTnT) has been demonstrated in an assay bu...

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