نتایج جستجو برای: short channel effects
تعداد نتایج: 2103218 فیلتر نتایج به سال:
A dual-halo dual-dielectric triple-material cylindrical-gate-all-around/surrounding gate (DH-DD-TM-CGAA/SG) MOSFET has been proposed and an analytical model for the transconductance-to-drain current ratio (TDCR) has been developed. It is verified that incorporation of dual-halo with dual-dielectric and triple-material results in enhancing the device performance in terms of improved TDCR. The ef...
Analog switches, which are known to be the bottle-neck for reducing the supply voltage, are analyzed. MOSFET transistors with channel lengths shorter than the minimum feature size (L 0 ) in a given technology are proposed for use as switches operated at a low supply voltage. These MOSFETs have lower threshold voltage and higher punchthrough currents compared to a transistor of L 0 length (due t...
Multiphoton resonances with ponderomotively upshifted Rydberg states are believed to have dramatic effects on the plateau of high-order above-threshold ionization. For short pulses and intense laser fields, individual Rydberg states lose their physical significance. Under these conditions, on the basis of experimental and theoretical investigation of the dependence of the photoelectron spectra ...
III-V-on-nothing (III-VON) metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally demonstrated with In0.53Ga0.47As as channel and atomic layer deposited Al2O3 as gate dielectric. A hydrochloric acid based release process has been developed to create an air gap beneath the InGaAs channel layer, forming the nanowire channel with width down to 40 nm. III-VON MOSFETs with c...
As MOS devices scale to submicron lengths, short-channel effects become more pronounced, and an improved transistor model becomes a necessary tool for the VLSI designer [10]. We present a simple, physically based charge-controlled model. The current in the MOS transistor is described in terms of the mobile charge in the channel, and incorporates the physical processes of drift and diffusion. Th...
In mobile communications systems the channel quality is determined by two physical effects: The short term fading due to scattering, reflections and interference and the long term fading due to the change of the geographical surroundings. Since the influence of the short term fading can be easily reduced by using interleaving techniques, the main channel coding task is to cope with the long ter...
As scaling down MOSFET devices degrade device performance in term of leakage current and short channel effects. To overcome the problem a newer device Silicon-on-Insulator (SOI) MOSFET has been introduced. The Fully Depleted (FD) SOI MOSFETs also suffer from short channel effects (SCE) in the sub 65 nm regime due to reduction in threshold voltage. Several investigations are going to reduce the ...
The global variability of ultra-thin body and buried oxide (UTBB) MOSFETs in subthreshold and off regimes of operation is analyzed. The variability of the off-state drain current, subthreshold slope, drain-induced barrier lowering (DIBL), gate leakage current, threshold voltage and their correlations are considered. Two threshold voltage extraction techniques were used. It is shown that the tra...
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