نتایج جستجو برای: shotcky barrier diode

تعداد نتایج: 109997  

Journal: :Physical review letters 2002
Takaaki Koga Junsaku Nitta Hideaki Takayanagi Supriyo Datta

We propose an electronic spin-filter device that uses a nonmagnetic triple barrier resonant tunneling diode (TB-RTD). This device combines the spin-split resonant tunneling levels induced by the Rashba spin-orbit interaction and the spin blockade phenomena between two regions separated by the middle barrier in the TB-RTD. Detailed calculations using the InAlAs/InGaAs material system reveal that...

Journal: :Chinese Physics 2022

In this paper, the failure mode and mechanism of silicon carbide (SiC) Schottky barrier diode (SBD) irradiated by high-energy tantalum (Ta) ions are studied. The experimental results show that reverse bias voltage during irradiation is key factor causing SiC SBDs. When device 400 V, heavy will cause single event burnout (SEB), a “hole” formed melting material appears in device. 250–300 manifest...

2009
Sheng Wang Lihuan Zhang Zhiyong Zhang Li Ding Qingsheng Zeng ZhenXing Wang Xuelei Liang Min Gao Jun Shen Huilong Xu Qing Chen RongLi Cui Yan Li Lian-Mao Peng

Semiconducting single-walled carbon nanotubes (SWCNTs) are one-dimensional (1D) and direct band gap materials with unique electric and optical properties and are promising candidates for future nanoelectronics and optoelectronics.1,2 The use of carbon nanotube (CNTs), nanowires, and other nanomaterials represents a typical approach to reduce both cost and size and to improve efficiency in photo...

ژورنال: انرژی ایران 2017

This paper presents a novel identification technique for estimation of unknown parameters in photovoltaic (PV) systems. A single diode model is considered for the PV system, which consists of five unknown parameters. Using information of standard test condition (STC), three unknown parameters are written as functions of the other two parameters in a reduced model. An objective function and ...

Journal: :IEEJ Transactions on Industry Applications 2004

Journal: :The Transactions of The Korean Institute of Electrical Engineers 2012

Journal: :IEEE Transactions on Terahertz Science and Technology 2021

A complete system modeling and characterization of a wideband differential terahertz (THz) direct detector, integrated in commercial CMOS technology, is presented. The detector consists recently developed double leaky-slot lens antenna that operates from 200 to 600 GHz combination with Schottky barrier diode (SBD) detection circuit. proposed methodology, starting low-frequency measurements on s...

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