A detailed description of the application of the convergent beam electron diffraction sCBEDd technique for studying strain propagation in the Si1−xGex /Si blanket wafers as well as silicon-based metal–oxide–semiconductor field-effect transistors is presented. Specifically, a simple and robust experimental procedure and analysis for silicon lattice strain measurement using the CBED technique is ...

A novel numerical approach to solving Schr odinger's equation as applied to quantum well heterostructures is described. The quantum mechanical energy subbands, wave functions and charge density are calculated based on a two-directional fourthorder Runge-Kutta (RK4) algorithm. The algorithm is applied to well-de ned quantum well structures. Results are compared with analytic solutions to ensure...

We report the fabrication of heterostructure p-MOSFETs with low-carbon Si1-xyGexCy channels. The use of low carbon fraction (y = 0.002) does not significantly affect the strain of the channel layer or the valence band offset. Small carbon fractions do improve the thermal stability of the channel region and make it possible to use conventional thermal oxidation and ion implant annealing without ...

The effect of carbon content on strain compensation in rapid thermal chemical vapour deposited Si1-x-yGexCy films was investigated using Raman spectroscopy as x varies from 10% to 16% and y varies from 0% to 1.8%. The dependence of the Raman intensities of the carbon local modes and the Si-Si modes versus carbon content was analysed. A linear dependence has been revealed for the integrated and ...

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We describe the first observation of spontaneous Raman emission, stimulated amplification, and lasing in a SiGe waveguide. A pulsed optical gain of 16dB and a lasing threshold of 25 W peak pulse power (20 mW average) is observed for a Si1-xGex waveguide with x=7.5%. At the same time, a 40 GHz frequency downshift is observed in the Raman spectrum compared to that of a silicon waveguide. The spec...