The diffusion and solubility of B implanted in δ-Ni2Si and NiSi layers is studied by SIMS. It is observed that both diffusion and solubility are higher in δ-Ni2Si than NiSi. The redistribution of B during Ni silicidation is also studied. The SIMS profiles show the presence of concentration step in the middle of the final NiSi layer. This profile shape is explained in light of the results obtain...

Measurements of the low-energy electronic structure in Gd2PdSi3 and Tb2PdSi3 by means of angle-resolved photoelectron spectroscopy reveal a Fermi surface consisting of an electron barrel at the Gamma point surrounded by spindle-shaped electron pockets originating from the same band. The calculated momentum-dependent RKKY coupling strength is peaked at the 1/2GammaK wave vector, which coincides ...

Pressure-composition isotherm measurements show that the ternary lanthanum palladium silicide phase La3Pd5Si absorbs reversibly up to 5 hydrogen atoms per formula unit at 550 K and 14 bar hydrogen pressure. In-situ synchrotron and neutron powder diffraction reveals three phases, an alpha-phase having the limiting composition La3Pd5SiD approximately 1.6 at low deuterium pressure (at up to 9.5 ba...

The study of films containing narrow-gap semiconductors is a very promising field related to the production thermal sensors. In this work, we consider possibility obtaining film coatings from silicides Ba, Na, Ni, Co, Pd, Mn, and P BaTiO3 using ionplasma methods. metal on surface crystalline silicon mica their electronic X-ray structural characteristics are studied. dependence properties condit...