The optical absorption in a nanowire heterostructure consisting of a crystalline silicon core surrounded by a conformal shell of amorphous silicon is studied. We show that they exhibit extremely high absorption of 95% at short wavelengths (λ < 550 nm) and a concomitant very low absorption of down to less than 2% at long wavelengths (λ > 780 nm). These results indicate that our nanowires do not ...

We have comprehensively analyzed the influence of the probe beam’s polarization state and incident angle on the vibrational absorption spectra of thin solid films such as hydrogenated amorphous silicon nitride and hydrogenated amorphous silicon in Fourier transform infrared spectroscopy. This analysis demonstrates the nuisance of interference fringes in distorting the bond structure of thin sol...

We have developed the 3-dimensional optical model for thin film silicon solar cells (amorphous, microcrystalline, single or multijunction) with nanorough surfaces/interfaces. For these cells the external quantum efficiency, short circuit current, total reflectance and all absorption losses can be computed taking into account roughness, angular distribution of scattered light, thicknesses and ex...

Semiconducting materials are central to the development of high-performance electronics that are capable of dissolving completely when immersed in aqueous solutions, groundwater, or biofluids, for applications in temporary biomedical implants, environmentally degradable sensors, and other systems. The results reported here include comprehensive studies of the dissolution by hydrolysis of polycr...

The electrical properties of polymeric thin film transisitors (P-TFTs) based on poly(9,9-dioctylfluorene-cobithiophene) alternating copolymer (F8T2) have been studied. Device performance was compared for amorphous silicon nitride deposited by LPCVD and PECVD techniques, aluminum oxide deposited by sputtering, titanium oxide deposited by sputtering, and thermal silicon oxide gate dielectrics. A ...

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This paper describes how capacitance–voltage (C-V) and Kelvin probe (KP) measurements can be combined to determine the magnitude and centroid of the electric charge in a thin-film insulator. The technique is demonstrated on three films of relevance to silicon solar cells: aluminium oxide, amorphous silicon nitride and silicon dioxide. Since the charge within these films is of different magnitud...