Silicon tips used as field emitters have dimensions that are within the quantum confinement regime. Therefore they can be considered as freestanding silicon tips. In this letter, a photoluminescence spectrum of a 1003100 array of silicon tips was taken at 10 K. Narrow ultraviolet luminescence peaks were observed. Using the empirical pseudopotential homojunction model, it is demonstrated that th...

The field of plasma etching is reviewed. Plasma etching, a revolutionary extension of the technique of physical sputtering, was introduced to integrated circuit manufacturing as early as the mid 1960s and more widely in the early 1970s, in an effort to reduce liquid waste disposal in manufacturing and achieve selectivities that were difficult to obtain with wet chemistry. Quickly, the ability t...

BACKGROUND Silicon dioxide composites have been found to enhance the mechanical properties of scaffolds and to support growth of human adipose tissue-derived stem cells (hADSCs) both in vitro and in vivo. Silica (silicon dioxide alone) exists as differently sized particles when suspended in culture medium, but it is not clear whether particle size influences the beneficial effect of silicon dio...

Silicon and aluminum sources are most important reactants in the synthesis of zeolite. The use of the silicon source has an important effect on the crystallization of zeolites. Also, it can change the properties of the end product. This work reports the influence of three common commercial silica sources such as colloidal silica (Ludox AM-30), fumed silica and water glass on the crystallinity o...

A new method of fabricating high aspect ratio nanostructures in silicon without the use of sub-micron lithographic technique is reported. The proposed method comprises two important steps including the use of CMOS spacer technique to form silicon nitride nanostructure masking followed by deep reactive ion etching (DRIE) of the silicon substrate to form the final silicon nanostructures. Silicon ...

The paper deals with the measurement of the radius of curvature of silicon wafer surface. The aim of these measurements was to determine stresses generated during oxidation of silicon wafers. A greater molar volume of SiO2 layer in relation to the substrate material causes changes in the shape of oxidized surface, which results in stresses in both silicon dioxide layer and silicon. These change...

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieve...

The operation of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is based on the fact that the lateral conductivity of silicon at the silicon dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between metal gate and oxide, and applying a voltage across the insulator on top of the silicon, the lateral conducti...