A review of the properties of silicon-based two-dimensional (2D) photonic crystals is given, essentially infinite 2D photonic crystals made from macroporous silicon and photonic crystal slabs based on silicon-on-insulator basis. We discuss the bulk photonic crystal properties with particular attention to the light cone and its impact on the band structure. The application for wave guiding is di...

In this work we describe a one degree-of-freedom microelectromechanical thermal displacement sensor integrated with an actuated stage. The system was fabricated in the device layer of a silicon-on-insulator wafer using a single-mask process. The sensor is based on the temperature dependent electrical resistivity of silicon and the heat transfer by conduction through a thin layer of air. On a me...

We describe progress in the design and fabrication of laser diodes based on InPmembranes heterogeneously integrated onto silicon-on-insulator wire waveguides. Applications in optical interconnect and all-optical logic are discussed. © 2011 Optical society of America OCIS-codes: (060.6719) Packet switching; (250.3750) Optical logic devices; (250.4745) Optical processing devices

The dispersion of line-defect modes in silicon-on-insulator photonic crystal waveguides is explored by means of angleand polarization-resolved micro-reflectance measurements. The frequency-wave vector range accessible to the experiments is greatly expanded by the use of attenuated total reflectance, in addition to the standard one, thereby allowing one to study both truly guided (evanescent) an...

The first three-axis micro-force sensor with adjustable force range from ±20 μN to ±200 μN and sub-micro-Newton measurement uncertainty is presented. The sensor design, the readout electronics, the sensor characterization and an uncertainty analysis for the force predictions are described. A novel microfabrication process based on a double silicon-on-insulator (SOI) substrate has been developed...

In this paper the features of multiple material gate silicon-on-insulator MOSFETs are presented and compared with single material gate silicon-on-insulator MOSFET structures. The results indicate that the multiple material gate structures reduce short channel effects such as drain induce barrier lowering, hot electron effect and better current characteristics in comparison with single material ...

We present a modeling scheme for simulating ballistic hole transport in thin-body fully depleted silicon-on-insulator pMOSFETs. The scheme includes all of the quantum effects associated with hole confinement and also accounts for valence band nonparabolicity approximately. This simulator is used to examine the effects of hole quantization on device performance by simulating a thin (1.5-nm) and ...

Silicon nanowire sensors are fabricated from the active silicon layer of silicon-on-insulator (SOI) wafers and used for label-free sensing of specific proteins. A fabrication method is demonstrated which avoids the integration difficulties inherent in a bottom-up approach, without the drastic decrease in carrier mobility usually associated with reactiveion-etched nanowires. Nanowire devices are...

This paper reviews the basic circuit issues of silicon-on-insulator (SOI) technology for metal-oxide-semiconductor (CMOS) circuits. The superior features of SOI in low power, high speed, high device density and the effect of floating body particularly in partial depletion (PD) SOI device are addressed. Analog and RF circuits are considered and their performances are compared with those reported...