This research demonstrates that an indium tin oxide–silicon oxide–hafnium aluminum oxide‒silicon device with enhanced UV transparency ITO gate (hereafter E-IOHAOS) can greatly increase the sensing response performance of a SONOS type ultraviolet radiation total dose TD) sensor. Post annealing process is used to optimize optical transmission and electrical resistivity characterization in film. V...

In this paper, the prototyping of a new piezoresistive microforce sensor is presented. An original design taking advantage on both mechanical and bulk piezoresistive properties of silicon is presented and enables to easily fabricate a very small, large range, high sensitivity with high integration potential sensor. The sensor is made of two silicon strain gages for which widespread and known mi...

In this paper, we present the design, fabrication and test of a batch fabricated capacitive pressure sensor with an integrated Guyton capsule for interstitial fluid pressure measurement. The sensor is composed of 12 μm thick single crystalline silicon membrane and a 3 μm gap, hermetically sealed through silicon–glass anodic bonding. A novel batch scale method for creating electrical feed-throug...

Film bulk acoustic resonators (FBARs) are widely applied in mass bio-sensing and pressure sensors, owing to their extreme sensitivity and integration ability, and ability to miniaturize circuits. A volatile organic compound (VOC) sensor with a polymer-coated diaphragm, using FBARs as a strain sensing element is proposed and optimized. This vapor sensor is based on organic vapor-induced changes ...

The operation of the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is based on the fact that the lateral conductivity of silicon at the silicon dioxide-silicon interface strongly depends on the transverse electric field in the oxide. Adding a small air-filled spacer between metal gate and oxide, and applying a voltage across the insulator on top of the silicon, the lateral conducti...

In this work, we demonstrate experimentally the use of an array of gold nanodisks on functionalized silicon for chemosensing purposes. The metallic nanostructures are designed to display a very strong plasmonic resonance in the infrared regime, which results in highly sensitive sensing. Unlike usual experiments which are based on the functionalization of the metal surface, we functionalized her...

This work presents a novel method based on the micromachined acoustic wave sensor for evaluating silicon membrane thickness. Like pressure sensors, accelerometers, micro flow sensors and micropumps, many micro-electro-mechanical systems (MEMS) devices require that silicon membrane thickness be known exactly. Precisely controlling silicon membrane thickness during wet etching is important, becau...

In this paper, a new and simple silicon straight tube is tested as a fluid density sensor. The tube structure has a hexagonal cross section. The fabrication process consists of anisotropic silicon etching and silicon fusion bonding. A tube structure with a length of 2.65 cm was tested. The sample volume is 9.3 μL. The first three modes of vibrations were investigated with a laser Doppler vibrom...

One of the main challenges of developing a chip-level IMU is combining multiple high-performance sensors on a single die capable of detecting motion along independent directions with minimal cross-axis sensitivity. To address this challenge, a folded-chip approach is being explored utilizing a 3D SOI backbone suitable for high-aspect ratio sensor fabrication. Assembly is done on the wafer level...