We have studied the evolution of the spin Hall effect (SHE) in the regime where the material size responsible for the spin accumulation is either smaller or larger than the spin diffusion length. Lateral spin valve structures with Pt insertions were successfully used to measure the spin absorption efficiency as well as the spin accumulation in Pt induced through the spin Hall effect. Under a co...

We explore thermoelectric spin transport and spin dependent phenomena in a noncollinear quantum dot spin valve setup. Using this setup, we demonstrate the possibility of a thermoelectric excitation of single spin dynamics inside the quantum dot. Many-body exchange fields generated on the single spins in this setup manifest as effective magnetic fields acting on the net spin accumulation in the ...

Spin selectivity in a ferromagnet results from a difference in the density of up- and down-spin electrons at the Fermi energy as a consequence of which the scattering rates depend on the spin orientation of the electrons. This property is utilized in spintronics to control the flow of electrons by ferromagnets in a ferromagnet (F1)/normal metal (N)/ferromagnet (F2) spin valve, where F1 acts as ...

Magneto-electric coupling is a desirable property for material used in modern electronic devices to possess due the favorable possibilities of tuning properties using magnetic field and vice versa. However, such materials are rare nature. That why so-called superlattice approach creating receiving so much attention. In approach, functionality combined heterostructure depends on interacting comp...

A new magnetic field sensor is presented, based on perpendicular hot electron transport in a giant magnetoresistance (CoyCu) 4 multilayer, which serves as a base region of an n-silicon metal-base transistor structure. A 215% change in collector current is found in 500 Oe (77 K), with typical characteristics of the spin-valve effect. The in-plane magnetoresistance was only 3%. The transistor str...

Spin degree of freedom of electrons is one of the alternative state variables under consideration for processing information, beyond the charge based CMOS technology. The potential of spintronics based research lies in the possibilities for a new generation of computers that can be non-volatile, faster, smaller, and capable of simultaneous data storage and processing all with reduced energy con...

Experimental evidence from both spin-valve and quantum transport measurements points towards unexpectedly fast spin relaxation in graphene. We report magnetotransport studies of epitaxial graphene on SiC in a vector magnetic field showing that spin relaxation, detected using weak-localization analysis, is suppressed by an in-plane magnetic field B(∥), and thereby proving that it is caused at le...

An anionic radical through the charge transfer process of hybridization on spinterface was found in a doped P3HT spin valve, which may effectively enhance device performance.

We demonstrate spin injection into superconducting Nb by employing a spin absorption technique in lateral spin valve structures. Spin currents flowing in a nonmagnetic Cu channel are preferably absorbed into Nb due to its strong spin-orbit interaction, the amount of which dramatically changes below or above the superconducting critical temperature (TC). The charge imbalance effect observed in t...