Magnetic skyrmions are attractive for representing data in next-generation spintronic devices owing to their stability, small size, and ease of manipulation with spin torques. In order realize such devices, it is necessary be able write, manipulate, read back by means nucleating, propagating, detecting using an all-electrical approach. Here, we review the basic concepts underpinning magnetic sk...

Transition metal-free magnetism and half-metallicity recently has been the subject of intense research activity due to its potential in spintronics application. Here we, for the first time, demonstrate via density functional theory that the most recently experimentally realized graphitic carbon nitride (g-C4N3) displays a ferromagnetic ground state. Furthermore, this novel material is predicted...

T aking advantage of the fact that electrons, photons and some elementary excitations have an intrinsic angular momentum (spin) offers a fascinating opportunity to study materials properties. Introducing a net imbalance between spins pointing in different directions (say, 'up' and 'down') is one way to probe phenomena including spin–orbit and hyperfine coupling, pairing of unconventional superc...

Abstract-Silicon, the main material of microelectronics, is perfectly suited for spin-driven applications. All-electrical spin injection in silicon has been demonstrated, however, the magnitude of the corresponding signal is larger than theoretically predicted. We analyze the influence of electrostatic charge screening on the efficiency of spin injection at the ferromagnet-semiconductor interfa...

Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spinpolariz...

The discovery of tunneling and giant magnetoresistance in inorganic spin valves has led to a revolution in the field of magnetic memory and the significant increase in the storage capacity of modern hard drives. Simultaneously, given their inexpensive production, flexibility and diverse applications, molecularbased organic materials have become extremely important in electronic devices and circ...

Single electron electronics is now well developed, and allows the manipulation of electrons one-by-one as they tunnel on and off a nanoscale conducting island. In the past decade or so, there have been concerted efforts in several laboratories to construct single electron devices incorporating ferromagnetic components in order to introduce spin functionality. The use of ferromagnetic electrodes...

Magnetic domains and the walls between are the subject of great interest because of the role they play in determining the electrical properties of ferromagnetic materials and as a means of manipulating electron spin in spintronic devices. However, much less attention has been paid to these effects in antiferromagnets, primarily because there is less awareness of their existence in antiferromagn...