Here we describe the metathesis reactions of a strained eight-membered ring that contains both alkene and alkyne functionality. We find that the alkyne metathesis catalyst produces polymer through a ring-opening alkyne metathesis reaction that is driven by the strain release from the monomer. The strained monomer provides unusual reactivity with ruthenium-based alkene metathesis catalysts. We i...

Ge on Si micro-disk, ring and racetrack cavities are fabricated and strained using silicon nitride stressor layers. Photoluminescence measurements demonstrate emission at wavelengths ≥ 2.3 μm, and the highest strained samples demonstrate in-plane, tensile strains of > 2 %, as measured by Raman spectroscopy. Strain analysis of the micro-disk structures demonstrate that shear strains are present ...

Embedding seven-membered rings into polycyclic aromatic molecules is attractive as they can exert an influence on molecular conformation that ultimately changes the solubility and π-electronics. The considerations in designing synthesizing a highly strained azatriseptane framework are discussed herein. We employ twofold macrocyclization strategy to form [7,7,7]-system through scoping various st...

Introduction: SiGe pMOSFETs show considerable improvements in device performance due to the smaller hole effective mass exhibited by Ge.Further improvement in device performance can be obtained by growing pseudomorphically compressively strained SiGe on Si. Despite a lattice mismatch of ~4% between Si and Ge, researchers have been recently able to fabricate ultrathin body and nanowire pMOSFETs ...

Strained-silicon/relaxed-silicon-germanium alloy (strained-Si/SiGe) heterostructures are the foundation of Group IV-element quantum electronics and quantum computation, but current materials quality limits the reliability and thus the achievable performance of devices. In comparison to conventional approaches, single-crystal SiGe nanomembranes are a promising alternative as substrates for the e...

Interference-enhanced Raman scattering was utilized to characterize strain in ultra-thin strained silicon-germanium (SiGe) and silicon layers on insulator. Strained SiGe and silicon films with thickness ranging from 10 to 30 nm on insulating borophosphorosilicate glass (BPSG) were formed by layer transfer techniques and/or strain manipulation via lateral expansion of strained films. The optical...