It is known from many published data on amorphous or polycrystalline silicon and metal oxides based Thin Film Transistors (TFTs) that their electrical parameters improve when decreasing the thickness of channel layer. The origin this improvement discussed here through electrostatic arguments only. In particular, it shown behavior subthreshold swing with does not depend type materials. material ...

In this work, to study the features of Al atomic ratio in Al2O3-doped HfGaO (referred as AlHfGaO) channel layers thin-film transistors, and various AlHfGaO films were deposited at approximately 80 K using a vapor cooling condensation system. The oxygen vacancy defects resided defect density resulting transistors decreased with an increase ratio. As reduced, threshold voltage on/off current incr...

The reconfigurable feedback field-effect transistors (R-FBFETs) with a double-gated structure are designed and the logic memory operations of logic-in-memory (LIM) inverter comprising two R-FBFETs investigated. exhibit an extremely low subthreshold swing ≈1 mV dec−1, high on/off current ratio ≈107, long retention time 10 s, owing to positive loop mechanism. on-current p- n-channel modes is 1.03...

In this thesis, Aluminum-Gallium-Zinc oxide (AGZO) photo thin film transistors (PTFTs) fabricated by the co-sputtered method are investigated. The transmittance and absorption show that AGZO is highly transparent across visible light region, bandgap of can be tuned varying co-sputtering power. TFT demonstrates high performance with a threshold voltage (VT) 0.96 V, on/off current ratio 1.01 × 10...

We report the intrinsic and extrinsic electrical characteristics of advanced multilayer amorphous silicon (a-Si:H) thin-film transistor (TFT) with dual amorphous silicon nitride (a-SiNX:H) and a-Si:H layers. The thickness effect of the high electronic quality a-Si:H film on the transistor’s electrical property was investigated; with increasing film thickness, both field-effect mobility and subt...

We analyze and present an input gain-varying scheme for maximizing dynamic range in a well-known Gm–C bandpass filter by both minimizing noise for small input signals, and by achieving balanced swing levels at all filter nodes for large input signals. A micropower bandpass filter suitable for use in cochlear implants and other powerconstrained biomedical applications was implemented and tested ...

Indium titanium zinc oxide (InTiZnO) as the channel layer in thin film transistor (TFT) grown by RF sputtering system is proposed in this work. Optical and electrical properties were investigated. By changing the oxygen flow ratio, we can suppress excess and undesirable oxygen-related defects to some extent, making it possible to fabricate the optimized device. XPS patterns for O 1s of InTiZnO ...

This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2 at 300 °C exhibit a low leakage current of 2.5 × 10-13A, I on/I off ratio ...

We demonstrate high performance enhancementmode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of La1.8Y0.2O3 grown by atomic layer epitaxy (ALE) on GaAs(111)A substrates. A 0.5-μm-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec and ...