We have incorporated an aluminum single electron transistor directly into the defining gate structure of a semiconductor quantum dot, permitting precise measurement of the dot charge. Voltage biasing a gate draws charge from a reservoir into the dot through a single point contact. The dot charge increases continuously for large point contact conductance and in single electron steps with the con...

Bonding-pad densities on high-performance integratedcircuit chips are beginning to exceed the limits of available interconnect technologies. Also, stresses due to thermal mismatch in flip-chipped packages are reducing time to contact failure. We have addressed both of these problems by microlithographically fabricating highly elastic cantilever springs in linear arrays on pitches down to 6 μm. ...

We report a systematic investigation of interfacial thermal conductance (Gk) between few to tens -layered mechanical exfoliated molybdenum disulfide (MoS2) and crystalline silicon (c-Si). Based on Raman spectroscopy, we find Gk at room temperature increases with increased layer numbers of MoS2 from 0.974 MW m 2 K 1 to 68.6 MW m 2 K 1. The higher Gk of thicker samples reveals their better interf...

Carbon black dispersions are superior to the best commercial silver and ceramic particle thermal pastes for providing high thermal contact conductance across mating surfaces that are smooth (0.05 lm). For mating surfaces that are rough (15 lm), the combined use of carbon black and silver is more effective than carbon, silver or ceramic pastes. The use of a silver paste to even out the rough sur...

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