Gallium nitride (GaN) is one of the most important semiconductor materials in modern electronics. While GaN films are routinely deposited by chemical vapor deposition at around 1000 °C, low-temperature routes for need to be better understood. Herein, we present an atomic layer (ALD) process GaN-based on triethyl gallium (TEG) and ammonia plasma show that can improved adding a reactive pulse, “B...

Partial nitridation of W/Si multilayer systems with a nm period was investigated in an attempt to reduce optically unfavorable tungsten silicide formation the systems. Nitridation applied directly after deposition every Si layer by exposing surfaces reactive nitrogen species from ion source. As result substantially sharper interfaces and reduction were observed However, passivation treatment ca...

Vertically aligned titanium dioxide nanotube (TNT) arrays codoped with nitrogen and 3d transition metals were successfully fabricated using anodization and nitridation processes. The codoping of N and Fe yielded the highest visible-light-induced photoelectrochemical water oxidation due to bandgap narrowing of impurity levels by N and Fe.

TiN nanotube arrays, prepared by the anodization of metallic Ti foil substrate and subsequent simple nitridation in an ammonia atmosphere, were investigated as low-cost counter electrodes in dye-sensitized solar cells for the first time. It is found that the highly ordered TiN nanotube arrays on the metallic Ti foil substrate show an excellent performance, comparable with typical Pt counter ele...

Abstract This study reports the optical, electrical and mechanical properties of TiN films prepared by direct rapid thermal nitridation process from a photo-patternable TiO2 sol-gel layer. The approach is compatible to non-planar large substrates allows micro-nanotexturing crystallized surfaces in significantly short time, scale at lower cost compared layer deposition existing conventional proc...

Aggressive scaling of complementary metal–oxide–semiconductor ~CMOS! devices requires gate dielectrics with an oxide equivalent thickness, tox,eq;1 nm or less by the product introduction year 2012. Direct tunneling presents a significant performance limitation in field-effect transistors ~FETs! with homogeneous oxide gate dielectrics ,1.7 nm. Boron diffusion from p poly-Si gate electrodes in p-...

In this paper, the acceleration effect of nickel (Ni) on direct nitridation process diamond-wire saw powder (DWSP) was investigated. The DWSP doped with Ni additives were nitrided at different temperatures. To study mechanism accelerated nitridation, thermodynamics Si-O-N-Ni and processes analyzed by FactSage 7.2 single-crystal silicon blocks also instead DWSP. results revealed that decreased t...

Co2Nx/nitrogen-doped reduced graphene oxide (Co2Nx/NG) is synthesized by electrostatic co-precipitation of Co and rGO followed by high-temperature nitridation, which can serve as an efficient catalyst for sensitive glucose detection due to the unique electrocatalytic property of Co2Nx and synergistic effect between Co2Nx and N-doped rGO.