نتایج جستجو برای: thermionic emission

تعداد نتایج: 180582  

2013
Vivike J. F. Lapoutre Marko Haertelt Gerard Meijer André Fielicke Joost M. Bakker

emission Vivike J. F. Lapoutre, Marko Haertelt, Gerard Meijer, André Fielicke, and Joost M. Bakker a) FOM Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, NL-3439 MN Nieuwegein, The Netherlands Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany Radboud University Nijmegen, Institute for Molecules and Materials, FELIX Facility, Toernooiveld 7, 6525 E...

Journal: :Annals of the New York Academy of Sciences 2002
J Chen W Wang J Klemic M A Reed B W Axelrod D M Kaschak A M Rawlett D W Price S M Dirk J M Tour D S Grubisha D W Bennett

Design and measurements of molecular wires, switches, and memories offer an increased device capability with reduced elements. We report: Measurements on through-bond electronic transport properties of nanoscale metal-1,4-phenylene diisocyanide-metal junctions are reported, where nonohmic thermionic emission is the dominant process, with isocyanide-Pd showing the lowest thermionic barrier of 0....

2004
R. F. Kazarinov

A new type of transistor is proposed based on gate-controlled charge injection in unipolar semiconductor structures. Its design has some similarity with the recently fabricated triangular barrier diodes but contains an additional input circuit which allows an independent control of the barrier height for thermionic emission. This circuit is provided by a MOS gate on the semiconductor surface. I...

2005
Zhixi Bian Ali Shakouri

We use two heterostructure designs to improve the energy conversion efficiency of solidstate thermionic devices. The first method is to use a non-planar heterostructure with roughness in order of electron mean free path. This has some combined benefits of increased effective interface area, and reduced total internal reflection for the electron trajectories arriving at the interface. Monte Carl...

Journal: :Nano letters 2006
Yung-Fu Chen Michael S Fuhrer

Electrical power >1 mW is dissipated in semiconducting single-walled carbon nanotube devices in a vacuum. After high-power treatment, devices exhibit lower on currents and intrinsic, ambipolar behavior with near-ideal thermionic emission from Schottky barriers of height one-half the band gap. Upon exposure to air, devices recover p-type behavior, with positive threshold and ohmic contacts. The ...

Journal: :IBM Journal of Research and Development 2011
Joel M. Vaughn C. Wan Keith D. Jamison Martin E. Kordesch

Introduction Thermionic cathodes are used in many industrial vacuum electronic applications. Vacuum tubes for high-frequency or high-power applications are one example (e.g., see [1]). The emission properties of thermionic electron sources in vacuum devices are often Bimproved[ by the addition of oxide coatings on the metal cathode surface [2, 3]. The explanation of the improvement is usually b...

Journal: :Proceedings of the National Academy of Sciences 1927

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