Leakage power is the main dominant source of power dissipation for Sub-lOOlJm VLSI circuits. Various techniques were proposed to reduce the leakage power dissipation; one of these techniques is Multi-Threshold voltage. In this paper, the exact and optimal values of Threshold Voltage (Vth) for each transistor of the design are found for any sequential circuit. This is achieved by applying Artifi...

Implantable image sensors have several biomedical applications due to their miniature size, light weight, and low power consumption achieved through sub-micron standard CMOS (Complementary Metal Oxide Semiconductor) technologies. The main applications are in specific cell labeling, neural activity detection, and biomedical imaging. In this paper the recent research studies on implantable CMOS i...

This paper proposes a new sub-threshold low power 9T static random-access memory (SRAM) cell compatible with bit interleaving structure in which the effective sizing adjustment of access transistors in write mode is provided  by isolating writing and reading paths. In the proposed cell, we consider a weak inverter to make better write mode operation. Moreover applying boosted word line feature ...

A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature Tth can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temper...